SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Wolf speed -- Ignore unavailable to you. Want to Upgrade?


To: Matrix_Man who wrote (1970)2/10/2000 10:31:00 AM
From: slacker711  Respond to of 10713
 
From Yahoo Cree....

lfw.pennwellnet.com

Laser diodes emit at 450 nm for an
estimated 200 hours

Laser diodes made of indium gallium nitride (InGaN) multiple
quantum wells emitting between 390 and 420 nm have
achieved continuous-wave (CW) operation at room
temperature of more than 10,000 hours. While such violet
laser diodes are useful for optical storage devices,
applications such as laser-based full-color displays require a
wavelength of 450 nm for a true blue color. The wavelength
can be increased by raising the amount of indium in the
InGaN well layers, but this causes the threshold current
density to increase dramatically.

Shuji Nakamura and colleagues at Nichia Chemical Corp.
(Kaminaka, Japan) found that they could not achieve
room-temperature CW operation with two or three quantum
wells, but with a single-quantum-well structure they could
make diodes that emitted at 450 nm with an estimated
lifetime of 200 hours. This lifetime, which is too short for
commercial purposes, is probably due to poor crystal quality
of the well layer, Nakamura said. If the problems of 450-nm
diodes can be solved, Nakamura said it should be possible
to fabricate InGaN-based laser diodes at longer (green)
wavelengths, where no such devices currently exist. Shuji
Nakamura has since accepted an appointment to the
faculty of the University of California at Santa
Barbara.?John Wallace