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To: Robert Jacobs who wrote (2396)	3/11/2000 6:21:00 PM
From: Guy Gordon	Respond to of 10713

I wonder why they put that on the Cree web site: Wide Energy Bandgap (eV) 4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12 Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible. SiC does have a wide bandgap. But that is not what makes possible the fabrication of blue LEDs. GaN and GaIN are the materials that emit the blue light. SiC is useful because its latice spacing is a good match for GaN. Has Cree actually fabricated SiC LEDs? I'm not aware of such. Perhaps this is simply the result of their web designer getting it wrong.