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To: Guy Gordon who wrote (2397)	3/12/2000 6:47:00 PM
From: Jim Oravetz	Read Replies (2) \| Respond to of 10713

6/14/99 -- Cree Research, Inc. -- WebScan : Products - New Cree Rresearch, Inc. Announces First SiC Microwave Power Product - Cree Introduces 2 GHz MESFET Device Durham, NC, June 14, 1999 - Cree Research, Inc., (NASDAQ: CREE), the world leader in the development and manufacture of semiconductor materials and electronic devices made from silicon carbide (SiC), announced today the introduction of the first in a planned family of RF power transistor products designed for wireless and broadcast applications. This device, the CRF-20010, targeted for the driver stage of wireless base station amplifiers, is a 48 volt, 10 watt high linearity transistor with 12 dB of gain at 2 gigahertz (GHz). The CRF-20010 has passed initial product reliability tests and the company anticipates delivery of samples over the next three months. The product, based on Cree's proprietary 48 volt SiC MESFET technology, has performance advantages over conventional technologies. This 48 volt device eliminates the DC-to-DC converter required to utilize existing technologies such as silicon and gallium arsenide. The less complex circuitry results in increased reliability, reduced cost and increased efficiency. Neal Hunter, chairman and chief executive officer stated, "This product release launches yet another significant device business segment for Cree. We continue to develop cutting-edge solutions in a cost effective manner, and are leveraging our materials technology expertise for devices capable of performance not previously available." Jim