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Microcap & Penny Stocks : TGL WHAAAAAAAT! Alerts, thoughts, discussion. -- Ignore unavailable to you. Want to Upgrade?

To: SSP who wrote (38114)	3/20/2000 2:34:00 PM
From: Jim Bishop	Respond to of 150070

AFTC it's about time he tightened it. Other MM's nuts not to be on this one.....IMO

To: SSP who wrote (38114)	3/20/2000 2:57:00 PM
From: OFW	Respond to of 150070

NSCT News Just Out: PHOENIX, March 20 /PRNewswire/ -- National Scientific (OTC Bulletin Board: NSCT) is very pleased to inform its shareholders the company has received its Notice of Allowance dated March 13, 2000 on the Tunnel MOS(TM) Memory with all claims intact! Standard procedure dictates that the company should receive the patent number in approximately 90 days. This Notice of Allowance provides additional leverage with the companies that National Scientific is currently doing development work with, as well as with all future prospective companies interested in this device. NSC's achievement on the Tunnel MOS(TM) Memory represents a major advancement in silicon chip design for digital applications. All computers require memory function and the constant goal of memory manufacturers is to provide the fastest memory at the lowest cost as well as the least power consumption. States Lou Ross, President and CEO, "Not only have we achieved the above, but we have done it all in the same die area, so memory manufacturers will not have to spend millions of dollars retooling their machinery to embrace this new technology." He added, "This is a $60 billion industry with expected growth in the next two years to reach $200 billion. We intend to capture our share of this market." The newly designed memory addresses the needs of silicon manufacturers by providing an alternative to SRAM (Static Random Access Memory) and CMOS (Complimentary Metal-Oxide-Silicon) designs that is much faster, denser and requires less power than conventional NMOS (N-Channel Metal-Oxide-Silicon) SRAM technology. The revolutionary new cell design eliminates the need for P Transistors. SRAM and DRAM (Dynamic Random Access Memory) memories are key and integral components of digital computing devices. Using less power with faster circuits will revolutionize many technologies, such as microcomputers, work stations, PC's, etc., which depend on an ever increasing amount of memory to improve performance and any improvement in chip size amounts to a considerable reduction in cost. National Scientific is headquartered in Phoenix, AZ. It is involved in the research and development of electronic components that are suitable for applications in the wireless communications industry. For further information contact: Wendy S. Burton, Director of Corporate Communications, 888-488-3181 or visit the Company's website at: www.national-scientific.com for Company and product information. SOURCE National Scientific -0- 03/20/2000 /CONTACT: Wendy S. Burton, Director of Corporate Communications of National Scientific, 888-488-3181/ /Web site: national-scientific.com