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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: FJB who wrote (107758)	4/25/2000 12:01:00 PM
From: Pravin Kamdar	Read Replies (1) \| Respond to of 1572777

Bob G, Thanks for the link. CAD tools alone can't solve the problem alone, though. We're gonna need a new type of switch device that doesn't leak. At a supply voltage of 0.6 volts (where we are heading), it is hard to design a conventional FET that is ON at 0.6 volts and completely OFF at 0 volts. I think some sort of tunneling device is in order, but I can't figure out how to "gate" the thing using planar process technology. SOI locks up leakage from source and drain to the substrate, but doesn't solve source to drain channel leakage for conventional MOSFETs that are always weakly on (even when turned off) when designed for very low supply voltages. Anyway, thanks for the link. Pravin.