Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Mani1 who wrote (113181)	5/29/2000 1:16:00 AM
From: Joe NYC	Read Replies (1) \| Respond to of 1573740

Mani, Another rumor, this time from Israel (isn't this a fun weekend?): Timna 3 to 5 months late Posted by YAS on Sunday, 28 May 2000, at 4:31 p.m. Hello ! Although I read this BBS every day (at least), this is the first time I write something for it, but I think I have a scoop (I am sure of my info, but I don't know if it is indeed a scoop) : A friend of mine, which is an Intel employee (in Israel) said me that Intel will announce that Timna will be 3 to 5 months late. This is not good for them after the last long serie of mistakes. YAS jc-news.com Joe

To: Mani1 who wrote (113181)	5/29/2000 1:23:00 AM
From: Hans de Vries	Read Replies (1) \| Respond to of 1573740

Mani, I hope they did their homework well... This is what they claim: Performance Benefits Most of the heat generated in a microprocessor occurs in the logic core where 5 to 10 million transistors are operating at full rated speed. This area comprises only 1-2% of the area of the silicon chip and localized temperatures can exceed 150oC. Getting the heat out of this small area and into the rest of the chip and the package is an engineering challenge that silicon-28 can effectively address. Lower transistor junction temperatures due to isotopically pure silicon-28 will directly improve transistor performance due to higher carrier mobilities, reduced junction leakage in logic devices, reduced charge leakage in memory devices, and reduced metal electromigration. The lower temperatures possible will improve the reliability and lifetime of critical devices. The 1-2% is the area directly below the gates only: Localized hot-spots on the chip get their heat out to the rest of the die. Regards Hans.