Toshiba Launches Next Generation 256Mb DRAM Products; New DDR Synchronous DRAMs,DDR Fast Cycle RAMs and Direct Rambus DRAMs Expand Toshiba's ComprehensiveProduct Offering
Mon Jul 17 20:46:00 EDT 2000
IRVINE, Calif., Jul 17, 2000 (BUSINESS WIRE) -- Toshiba America Electronic
Components Inc. (TAEC) Monday announced a series of new high-speed 256 Megabit
(Mb) Dynamic Random Access Memory (DRAM) products using one of the most advanced
processing technologies currently available.
The extensive line-up of next generation products include Double Data Rate (DDR)
Synchronous DRAMs (SDRAMs), DDR Fast Cycle (FC) RAMs and Direct Rambus(TM) DRAMs
(RDRAM(TM)s).
Committed to remain at the forefront of DRAM technology, Toshiba's newest
additions to its already comprehensive line of memory technologies are designed
to deliver high density and high bandwidth solutions for major markets. This new
series of 256Mb DRAMs meets the demands for increased memory capacity and
enhanced performance in workstations, servers and high-performance computers, as
well as supports high-speed operations in image-processing and network
applications.
"With the introduction of our latest line of DRAM products, Toshiba continues to
offer developers a wide range of options that support a full range of
applications," said Jaime Stitt, business development manager, DRAM Products,
Memory Business Unit at TAEC. "These new devices are well suited to meet the
ever-growing needs of information and communication products and to bring their
performance to a new level. Additionally, we are able to offer our customers
enhanced efficiency and flexibility in their design process through our new
global supply chain management model that we recently established in conjunction
with Kingston Technology."
In addition to Toshiba's previously announced 256Mb SDRAM, these new DRAM
offerings are all based on advanced 0.175 micron (um) process technology which
provides Toshiba with flexibility within their front-end manufacturing. This
enables Toshiba to adjust their product mix as needed to support a variety of
applications.
The new products support double-data transfer mode on both the rising and
falling edge of the clock cycle as opposed to just the rising edge in the case
of Single Data Rate (SDR) SDRAMs. Toshiba's new 256Mb DDR SDRAM features
increased density with double the burst transfer rate over existing SDR yet
maintains random access performance. The high-density DDR SDRAM solution excels
in platforms requiring large amounts of system memory where memory accesses are
random yet still have moderate burst size needs.
The DDR FCRAM(TM)s, jointly developed with Fujitsu Limited, offer lower power
consumption by narrowing the memory active areas and incorporate a proprietary
core technology that achieves fast random access at 30 nanoseconds (ns) cycle
time. The FCRAM solution excels in applications where DRAM densities with random
cycle performance approaching SRAM speeds are needed.
Toshiba, based on a license from Rambus Inc., has developed direct Rambus DRAMs
operating at 800 megahertz (MHz) and offering a data transfer rate of 1.6
gigabytes (GB) per second. The high-density RDRAM solution excels in platforms
requiring large data streams of co-located data within the device using the
high-bandwidth interface.
Product Specifications:
256Mb Double Data Rate Synchronous DRAMs
Part Number Configuration Maximum data
transfer rate
(operating frequency)
TC59WM803BFT-70/75/80 16M words x 4 286, 266, 250Mbps
banks x 4 bit (143, 133, 125MHz)
TC59WM807BFT-70/75/80 8M words x 4 286, 266, 250Mbps
banks x 8 bit (143, 133, 125MHz)
TC59WM815BFT-70/75/80 4M words x 4 286, 266, 250Mbps
banks x 16 bit (143, 133, 125MHz) (143, 133, 125MHz)
256Mb Double Data Rate FC RAMs (Data Mask function type)
Part Number Configuration Maximum data
transfer rate
(operating frequency)
TC59LM803BFT-22/24/30 16M words x 4 308, 286, 250Mbps
banks x 4 bit (154, 143, 125MHz)
TC59LM807BFT-22/24/30 8M words x 4 308, 286, 250Mbps
banks x 8 bit (154, 143, 125MHz)
TC59LM815BFT-22/24/30 4M words x 4 308, 386, 250Mbps
banks x 16 bit (154, 143, 125MHz) (154, 143, 125MHz)
256Mb Double Data Rate FC RAMs (Variable Write function type)
Part Number Configuration Maximum data
transfer rate
(operating frequency)
TC59LM802BFT-22/24/30 16M words x 4 308, 286, 250Mbps
banks x 4 bit (154, 143, 125MHz)
TC59LM806BFT-22/24/30 8M words x 4 308, 286, 250Mbps
banks x 8 bit (154, 143, 125MHz)
TC59LM814BFT-22/24/30 4M words x 4 308, 286, 250Mbps
banks x 16 bit (154, 143, 125MHz) (154, 143, 125MHz)
256Mb and 288Mb Direct Rambus DRAMs
Part Number Configuration Maximum data
transfer rate
TC59RM816MB-8/7/6 512k words x 32 800MHz/711MHz/600MHz
banks x 16 bit
TC59RM818MB-8/7/6 512k words x 32 800MHz/711MHz/600MHz
banks x 18 bit
Additional Product Specifications:
256Mb Double Data Rate Synchronous DRAMs
Process: 0.175 micron CMOS process technology
Power supply: 2.5V+/-0.2V
Package: 66-pin 400 mil plastic TSOP, 0.65mm pin pitch
Interface: SSTL-2
Maximum data transfer rate: -70 286Mbps (CAS latency=2.5)
266Mbps (CAS latency=2.0)
-75 266Mbps (CAS latency=2.5)
250Mbps (CAS latency=2.0)
-80 250Mbps (CAS latency=2.5)
200Mbps (CAS latency=2.0)
256Mb Double Data Rate Fast Cycle RAMs
Process: 0.175 micron CMOS process technology
Power supply: 2.5V+/-0.2V
Package: 66-pin 400 mil plastic TSOP, 0.65mm pin pitch
Interface: SSTL-2
Maximum data transfer rate: -22 308Mbps (CAS latency=3.0)
266Mbps (CAS latency=2.0)
-24 286Mbps (CAS latency=3.0)
250Mbps (CAS latency=2.0)
-30 250Mbps (CAS latency=3.0)
200Mbps (CAS latency=2.0)
256Mb and 288Mb Direct Rambus DRAMs
Process: 0.175 micron CMOS process technology
Power supply: 2.5V+/-0.13V
Package: 92-pin Chip Scale Package (CSP), 0.8mm ball pitch
Interface: RSL (Rambus Signaling Level)
Maximum data transfer rate: -8 800MHz
-7 711MHz
-6 600MHz
Pricing and Availability
Samples of these products are available now, with volume production slated for
the fourth quarter of 2000. Samples are priced at $120 for DDR SDRAM, $200 for
DDR FCRAM and $150 for Direct RDRAM.
About TAEC's Unique Supply Chain Management Model
TAEC has announced that it has joined forces with Kingston Technology and Payton
Technology. This new relationship will enable U.S.-based, end-to-end DRAM
operations targeting new levels of efficiency along with increased flexibility,
and significant reductions in cycle time.
About TAEC
TAEC is the North American engineering, manufacturing, marketing and sales arm
of Toshiba Semiconductor Co. and Toshiba Display Devices and Components Co. TAEC
is recognized as one of the world's largest suppliers of semiconductor,
electronic component and storage solutions. Toshiba's Semiconductor Co. is one
of the world's leading manufacturers and suppliers of semiconductor products
including LSIs, microprocessors and controllers, and advanced memory products,
in addition to discrete and bipolar components.
TAEC is also responsible for sales and marketing of other major electronic
components including liquid crystal displays, color display and picture tubes,
lithium-ion and other secondary batteries. For additional information, visit
TAEC's Web site at www.toshiba.com/taec.
FCRAM is a trademark of Fujitsu Limited.
Rambus DRAM and Rambus are trademarks of Rambus Inc.
Editors Note: Reader inquiries please publish 800/879-4963, ext. 238
CONTACT: Toshiba America Electronic Components Inc., Irvine
Michelle Schneider, 949/455-2344, (not for reader
inquiries)
michelle.schneider@taec.toshiba.com
For reader inquiries publish 800/879-4963, ext. 238
or
Benjamin Group/BSMG Worldwide
Morag Rich or Penny Capra, 949/260-1300
morag_rich@benjamingroup.com
penny_capra@benjamingroup.com
URL: businesswire.com
Today's News On The Net - Business Wire's full file on the Internet
with Hyperlinks to your home page.
Copyright (C) 2000 Business Wire. All rights reserved.
Distributed via COMTEX.
:0) |
