SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : WDC/Sandisk Corporation -- Ignore unavailable to you. Want to Upgrade?


To: Ausdauer who wrote (15356)10/5/2000 5:01:44 PM
From: rjk01  Read Replies (1) | Respond to of 60323
 
Tower Semiconductor and Saifun Semiconductor Demonstrate 100,000-Cycle Capability of Their Flash Technology
Business Wire - Thursday, October 05, 2000

MIGDAL HAEMEK and NETANYA, Israel--(BUSINESS WIRE)--Oct. 5, 2000-- Tower Semiconductor Ltd. (Nasdaq:TSEM) and Saifun Semiconductor Ltd. announced today that they have successfully demonstrated a breakthrough in the performance of Tower's microFLASH(R) process based on Saifun NROM(TM) technology.

Initial tests, performed in the joint laboratories of Saifun and Tower, on a 2-Mbit product manufactured at Tower's facility using the microFLASH process demonstrated 10 years data retention after 100,000 re-programming cycles. These tests followed recent results that established full-flash capability of 10,000 programming cycles with 10 years retention. The companies plan to provide samples of 10,000 cycle-capable products to selected customers by the middle of 2001 and 100,000 cycles at a later stage.

The pioneering Saifun NROM technology enables the implementation of flash memory arrays at approximately four times higher density and significantly lower production cost than any other available Flash architecture. Tower has been shipping production quantities of embedded and stand-alone microFLASH products that support a limited number of program-erase cycles to several customers since the beginning of the year. The new cycling capability, which was established with a simple positive-gate process that is ideal for embedded applications, will position Tower and Saifun at the forefront of Flash technology.

"The new performance level proves the viability of our unique Flash technology for the most demanding non-volatile memory applications," said Dr. Yoav Nissan-Cohen, Tower's co-CEO. "Combined with its unparalleled size and cost advantages, the microFLASH process will quickly become a major player in this booming market. Tower's exclusive rights to microFLASH foundry services will be a key competitive advantage of our planned Fab 2."

"Our achievement is an important milestone in making Saifun NROM technology the NVM technology of choice," said Dr. Boaz Eitan, Saifun's founder and CEO. "These results support Saifun's test results of its negative voltage EEPROM product. EEPROM samples capable of 1,000,000 programming cycles are targeted to be in the market by early 2001."