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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (38467)	10/18/2000 2:40:14 PM
From: Proud_Infidel	Respond to of 70976

Agilent confirms plan to build 6-inch GaAs fab Semiconductor Business News (10/18/00, 02:31:34 PM EDT) PALO ALTO, Calif. -- Agilent Technologies Inc. here today confirmed plans that it will break ground on a new 6-inch fab to develop gallium arsenide (GaAs) devices for wireless applications. As expected, Agilent-the test, measurement, and components spin-off of Hewlett-Packard Co.-earlier this month hinted it would build a new 6-inch GaAs facility in order to meet future demand for its products (see Oct. 13 story). The new fab, to be located in Ft. Collins, Colo., will be capable of making 48,000 wafers a year. The fab, which is expected to move into full production by the end of 2002, will include 15,000-square-feet of cleanroom space, with an option to expand that to 45,000-square- feet. The fab will produce devices based on a GaAs technology called enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT). "This fab will allow us to keep pace with the large demand that we anticipate for our high-efficiency handset power modules," said Dave Allen, vice president and general manager of Agilent's Wireless Semiconductor Division. Until the new fab goes into production, Agilent will continue to make its GaAs devices in its current 4-inch fab in Santa Clara, Calif.. Recently, the company announced another new 6-inch plant in Newark, Calif., which will produce a line of radio-frequency parts based on film-bulk acoustic resonator (FBAR) technology. The company also has a silicon fab in Ft. Collins as well.