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Technology Stocks : Alliance Semiconductor -- Ignore unavailable to you. Want to Upgrade?

To: DJBEINO who wrote (8874)	11/1/2000 8:32:44 AM
From: DJBEINO	Read Replies (1) \| Respond to of 9582

Another patent win for ALSC Interleaved stitch using segmented word lines Abstract A word line stitch mechanism to be used in high-density DRAMs is presented herein. The word line stitch mechanism of the present invention eliminates the problem caused by using the conventional word line stitch methods of the prior art in the high-density DRAMs. In the present invention, the word lines are segmented with an space between the two adjacent word line segments. Thereafter, the contacts between the word line segments and the associated metal layers are established such that the contact overlap areas are completely adjacent to all or a portion of the spaces between the word line segments of the adjacent word lines. Inventors: Kengeri; Subramani (Cupertino, CA). Assignee: Alliance Semiconductor Corporation (Santa Clara, CA). Appl. No.: 266,175 Filed: Mar. 10, 1999 company.sleuth.com