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To: Bill Jackson who wrote (18111)11/7/2000 5:26:47 PM
From: Pravin KamdarRead Replies (1) | Respond to of 275872
 
Bill,

The 15 Angstrom gate oxide thickness that Intel is using in their 0.13u process is quite remarkable from the perspective of just a few years ago. How to make such a thin oxide robust enough to prevent punch-through (even with the lower gate voltage) and withstand hot electron effects must be tricky. I wonder what the long term reliability of such a device is. It seems that the threshold voltage would have to drift with time, due to the accumulation of fixed charge from the creation of interface states and charge injection into the oxide. I don't know. I need to get out more often.

Pravin.