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Technology Stocks : Lam Research (LRCX, NASDAQ): To the Insiders -- Ignore unavailable to you. Want to Upgrade?

To: FJB who wrote (4442)	11/16/2000 4:30:39 PM
From: Proud_Infidel	Respond to of 5867

Lam aims etch platform at all process steps on 200-, 300-mm wafers Semiconductor Business News (11/16/00, 02:14:22 PM EDT) FREMONT, Calif.--Lam Research Corp. today announced what the company says it the industry's first etch platform series capable of handling both 200- and 300-mm wafers as well as a wide range of process applications in next-generation fabs. The company said its 2300 platform is an open architecture capable of handling four process modules for all etch applications needed in 0.13-micron and below technologies. Lam said its 2300 etch series has been used in the field for more than two years. The company cited an "Etch Tool Readiness" award for 300-mm systems received this year from the Semiconductor 300 joint-venture fab operated by Infineon Technologies AG and Motorola Inc. in Dresden, Germany. The new platform features Lam's Exelan Dielectric 2300, Versys Silicon 2300, and Versys Metal 2300 Etch Systems, which are aimed at handling all the etch applications needed for chip fabrication. The platform has been designed to act as a "bridge tool," enabling wafer fabs to use the system to start new processes on 200-mm (8-inch) substrates before migrating them to larger 300-mm (12-inch) wafers. "The inherent flexibility and low risk of implementing new process and monitoring technologies provides customers with a distinct competitive advantage," said David Hemker, vice president of new product development at Lam. Lam said the new 2300 platform includes improvements to widely used dual-frequency confined and transformer coupled plasma etch technology. These enhancements are aimed at handling complex process integration requirements and new process materials being introduced in next-generation ICs, said the company. The platform uses modular software for advanced factory automaton and process control. The new software also features a Web-enabled architecture to support communications from remote locations and shared development and troubleshooting capabilities, Lam said. The Exelan Dielectric 2300 etch system enables chip-processing fabs to apply dual-frequency confined plasma technology on 300-mm wafers. The design of the Exelan 2300 enable in situ photoresist strip and barrier removal steps to be integrated in copper damascene processes, according to Lam. The Versys Silicon 2300 etch system supports a range of process applications for 130-nm technology, including advanced gate BARC (bottom anti-reflective coating) and shallow-trench isolation (STI) in the same etch chamber. The Versys Silicon etch system uses Lam's ceramic-free chamber to provide in situ waferless auto cleaning steps for high meantime between wet cleans and improved particle performance for high yields, according to Lam.

To: FJB who wrote (4442)	11/16/2000 10:44:56 PM
From: Proud_Infidel	Respond to of 5867

Tower shareholders approve Fab 2 plant in Israel Semiconductor Business News (11/16/00, 05:47:21 PM EDT) MIGDAL HAEMEK, Israel--Tower Semiconductor Ltd. here today announced shareholder approval of its planned Fab 2 eight-inch wafer-processing plant. The Israeli foundry company has lined up chip companies to invest and contribute technology for the new wafer fab, which is expected to cost about $1.25 billion. Israel's finance minister has also recently proposed a $250 million government grant for the project (see Oct. 11 story). "This is a very important vote of confidence in Tower's strategic direction," said Yoav Nissan-Cohen, the foundry company's co-CEO. "With our shareholders blessing, we are now ready to move ahead toward finalizing the funding agreements and break ground soon." Tower plans to construct Fab 2 adjacent to its current facility in Migdal Haemek. The new frontend facility will be able to produce up to 33,000 eight-inch (200-mm) wafer per month, according to Tower. During the summer, Tower inked separate $75 million investment pacts with SanDisk Corp. of Sunnyvale, Calif., and Alliance Semiconductor Corp. of Santa Clara, Calif. Tower has also entered into technology and investment agreements with Toshiba Corp. of Japan as well as a major foundry pact with Macronix International Co. Ltd. of Taiwan. Macronix plans to cooperate in R&D with Tower for nonvolatile memories.

To: FJB who wrote (4442)	11/18/2000 10:21:05 PM
From: Proud_Infidel	Respond to of 5867

Lam Research Cut to 'Buy' at Thomas Weisel 11/17/00 6:50:00 AM Source: Bloomberg News Princeton, New Jersey, Nov. 17 (Bloomberg Data) -- Lam Research Corp. (LRCX US) was downgraded to ''buy'' from ''strong buy'' by analyst Eric Ross at Thomas Weisel Partners. ************************************* Lam Research Reiterated 'Buy' at Needham & Co. 11/17/00 6:05:00 AM Source: Bloomberg News Princeton, New Jersey, Nov. 17 (Bloomberg Data) -- Lam Research Corp. (LRCX US) was reiterated ''buy'' by analyst Theodore O'Neill at Needham & Co.

To: FJB who wrote (4442)	11/20/2000 10:43:05 PM
From: Proud_Infidel	Read Replies (1) \| Respond to of 5867

China's Shanghai Grace Semiconductor breaks ground on new fab, report says Semiconductor Business News (11/20/00, 10:33:09 AM EDT) SHANGHAI -- Shanghai Grace Semiconductor Manufacturing Corp., a high-profile silicon foundry venture based in China, here on Saturday broke ground on its initial wafer fab, according to a report from Reuters. Located in the Zhangjiang Hi-Tech Park in Shanghai's Pudong development zone, the $1.6 billion fab is an 8-inch, sub-micron plant scheduled to move into production in 2002 (see Sept. 15 story). The venture is led by the by the sons of China President Jiang Zemin and Taiwanese plastics tycoon Y.C. Wang. Winston Wang, the son of Y.C. Wang, will serve as the president of Shanghai Grace Semiconductor. Winston Wang is also president of Grace T.H.W., a Taipei-based supplier of materials for printed-circuit boards. Grace Semiconductor has reportedly licensed its sub-micron IC technologyfrom Japan's Oki Electric Industry Co. Ltd. (see Sept. 21 story).