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Technology Stocks : Advanced Micro Devices - Moderated (AMD) -- Ignore unavailable to you. Want to Upgrade?

To: Bill Jackson who wrote (19933)	11/20/2000 10:10:01 PM
From: porn_start878	Read Replies (1) \| Respond to of 275872

At least it should rule the performance mobile market for a while. Max

To: Bill Jackson who wrote (19933)	11/20/2000 11:01:04 PM
From: Dan3	Read Replies (1) \| Respond to of 275872

Re: , the scalability of the Athlon at .13 is a grey mist right now... This may be running at Dresden before too long... ASM INTERNATIONAL AND PHILIPS CONFIRM 70 NM TECHNOLOGY WITH ATOMIC LAYER CVD™ BILTHOVEN, The Netherlands, October 30, 2000 --- ASM INTERNATIONAL N.V. (NASDAQ: ASMI and AEX: ASM) and Philips N.V. (NYSE: PHG) have produced what is believed so far to be the thinnest gate dielectric with commercially acceptable leakage current. ASM and Philips have been able to demonstrate an electrically insulating layer stack with a thickness comparable to only four to five atoms silicon oxide. The insulating qualities of this ultra thin layer are almost one million times better than silicon oxide. Such thin electrically insulating layer stacks are required for the production of 70 nanometer (nm)(one billionth of a meter) devices. The thin insulating layer with 1.1 nm effective thickness was deposited with Atomic Layer CVD™, a technique developed by ASM Microchemistry Ltd., a wholly owned subsidiary of ASM International. “To produce such ultra thin layers, we had to change from silicon oxide to a layer consisting of three elements: zirconium, aluminum and oxygen. Our Pulsar™ Atomic Layer CVD system with its ability to control both composition and thickness on an atomic level proved to be critical to achieve this exciting result”, said Ivo Raaijmakers, Chief Technology officer of ASMI’s Front-End operations. Mart Graef, department head of the Semiconductor Process Modules group at Philips Research Laboratories in the Netherlands further commented: “This is a key process step in advanced silicon technology. It will enable the manufacturing of devices with a much higher performance than the ones currently in production”. cws.huginonline.com