Varian Semiconductor Introduces VIISta 3000 High Energy Ion Implantation System
VSEA Completes VIISta Single Wafer Platform for 300 mm and 200 mm Applications
GLOUCESTER, Mass.--(BUSINESS WIRE)--Dec. 4, 2000--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - news), a leading supplier of ion implant systems, today announced the introduction of the VIISta 3000 ion implanter. The VIISta 3000 extends Varian Semiconductor's market-leading expertise to high energy implant applications. Varian Semiconductor has over 1,800 single-wafer systems into production use at major semiconductor manufacturers worldwide.
With the introduction of the VIISta 3000, Varian Semiconductor now offers the most complete and widest energy range of ion implant solutions. The VIISta product offering now spans all energy ranges from the ultra-low energies [less than 80 eV] used for ultra shallow junctions and materials modification, to ultra high energies [greater than 3.75 MeV] for engineering the 'wells' created in the manufacture of semiconductor chips. All VIISta single-wafer, single-platform products utilize a common single-wafer backbone with optimized beam lines for specific ion implantation applications.
The VIISta single wafer platform commonality results in maximum manufacturing flexibility, reduced support requirements and exceptional productivity. Semiconductor manufacturers can now match their choice of VIISta beamlines to application requirements to optimize work in progress and tool utilization for both 200 mm and 300 mm wafers. In addition, the Varian Control System (VCS), common across the VIISta platform, provides superior process control coupled with powerful e-diagnostic capabilities for optimum tool-to-tool and fab-to-fab operating efficiencies. These benefits ensure maximum wafer output for the lowest level of capital investments.
About the VIISta 3000
The VIISta 3000 ion implanter provides superior doping capabilities for all high energy applications, coupled with high throughput for traditional medium current requirements. The VIISta 3000 includes all of the throughput and process advantages of single wafer ion implantation coupled with production-proven DC tandem-based high energy ion acceleration.
``One of the foundations of the VIISta platform is precise management of ion implant parameters which are critical to yield and throughput,'' noted David Hacker, Varian Semiconductor's strategic marketing manager. ``The VIISta 3000 extends this approach to high energy implantation in five areas:
1. The dopant location is precisely controlled. With its DC
tandem accelerator architecture coupled with in situ energy
calibration, the VIISta 3000 is the only high energy ion
implanter that directly measures and interlocks the final
implant energy.
2. The single wafer VIISta platform, which includes a patented
parallel beam, ensures precise and uniform incident angle
control. This is a fundamental architectural advantage of the
VIISta platform over alternative spinning disk 'batch'
systems. The VIISta 3000 minimizes shadowing, channeling
effects and encroachment for high aspect ratio photoresist
applications. This results in higher device yields and
superior performance for advanced geometries and across the
larger silicon substrates for ULSI applications.
3. The VIISta 3000 uses high-speed electrostatic beam scan
technology proven in over 700 production VSEA E-series medium
current systems. With this technique, the beam is swept across
the wafer about 10 times more often than alternative (magnetic
scan) approaches, providing superior process uniformity and
higher yields from the VIISta 3000.
4. The vacuum system architecture and dosimetry control systems
utilized on the VIISta 3000 have been optimized to provide
immunity to shifts in dopant location or quantity due to
undesired changes in dopant energy or ionization. For high
energy applications, thick photo-resist (up to 5 microns) is
required to provide adequate masking. The resultant outgassing
during implantation may cause shifts in the desired dose from
ion beam neutralization or ionization. The VIISta 3000 uses
angle correction magnet filtration and high levels of vacuum
pumping to minimize this effect and to provide superior
control of device parameters and implant results.
5. The VIISta 3000 provides the demonstrated advantages of single
wafer processing including precise high tilt control and
exceptional energy purity coupled with superior particulate
and metallic contamination control. As device linewidths
shrink, these process advantages become more critical to
ensure the highest effective wafer output in a wafer
manufacturing facility.
``Precise control of these implant parameters enables our customers to achieve higher yield, higher throughput and lower cost of ownership,'' Hacker concluded.
Dick Aurelio, president and chief executive officer remarked, ``We are very excited about the prospects for the VIISta platform and for the VIISta 3000 in particular, especially in Japan, which is the largest market for high energy implanters. We are planning to ship multiple VIISta 3000 systems to industry-leading logic and memory device manufacturers in the United States and Asia in the first half of 2001 for sub-180nm applications. The VIISta 3000 will contribute to growth in our revenues and earnings, while providing the industry's most advanced chip manufacturers with the ensured process control that has been the cornerstone of Varian Semiconductor's industry-leading E-series medium current systems and the latest advances of the VIISta 810 and VIISta 80 systems.''
Aurelio added, ``Varian Semiconductor is extending its single wafer technology leadership with the introduction of the VIISta 3000 for high energy ion implantation. With an installed base of more than 1,800 single wafer implanters and more single wafer implanters' sales worldwide than any other supplier, Varian Semiconductor is the secure choice for all ion implantation requirements. No other supplier can match our enormous wealth of knowledge and experience in providing the advantages of single wafer processing to the semiconductor industry.''
About The VIISta Platform
The VIISta platform, a complete family of single wafer ion implanters, includes the VIISta 80 for high current, VIISta 810 for medium current, VIISta 10 P2LAD for ultra low energy high current and VIISta 3000 for high energy and/or medium current. The VIISta platform uses the industry's only universal end-station and common software control system for improved ease of use, increased parts commonality and maximum production flexibility. Expected to become a market leader, the VIISta platform of implanters includes both 200 mm and 300 mm capability, optimized beam lines for specific application ranges and single wafer, high-tilt processing.
About Varian Semiconductor:
Varian Semiconductor Equipment Associates, Inc. is an industry leader in designing, manufacturing, marketing and servicing ion implantation systems, semiconductor processing equipment used in the fabrication of integrated circuits. Through the process and productivity advantages of single wafer technology, VSEA is providing chipmakers with high throughput, low cost and maximum yields. The company is based in Gloucester, Massachusetts and maintains offices around the world. Its stock is traded on the NASDAQ National Market under the symbol ``VSEA.'' Additional information and background is available on VSEA's website www.vsea.com.
Note: This press release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the industry outlook, the company's sales growth, market share, capacity utilization and technological improvements and benefits, and any statements using the terms ``believes,'' ``anticipates,'' ``expects,'' ``plans'' or similar expressions, are forward-looking statements. The forward-looking statements involve a number of risks and uncertainties. Among the important factors that could cause actual results to differ materially from those indicated by such forward-looking statements are: the short operating history for the company as a separate entity; volatility in the semiconductor equipment industry; significant fluctuations in the company's quarterly operating results; risks associated with the company's transition to a new information technology infrastructure; the impact of rapid technological change and the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; uncertain protection of patent and other proprietary rights; potential environmental liabilities; the company's reliance on a limited group of suppliers; the ability of the company's suppliers to respond to increased demand for parts; the company's dependence on certain key personnel risk factors described from time to time in the company's periodic reports and registration statements filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release.
Note to Editors: Please join Varian Semiconductor at our Semicon-Japan Press Conference to introduce the VIISta 3000 in Chiba, Japan, on Wednesday, December 6, 2000 at 11:00 a.m. local time at the Hotel New Otani Makuhari Messe. |
