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To: nixtox who wrote (21671)	12/6/2000 1:19:58 PM
From: Daniel Schuh	Read Replies (2) \| Respond to of 275872

Er, I'm not a process guy. My understanding of "epitaxial" is limited to the information in this link: google.com . That link refers to chemical vapor phase deposition as the standard technique for manufacturing such wafers. Offhand, it seems like it might be a relatively major process revision to switch to epitaxial wafers. The SOI stuff might involve eptiaxial wafers, I did come across a reference to Silicon on Saphire as an epitaxial technology. Cheers, Dan.

To: nixtox who wrote (21671)	12/6/2000 1:52:17 PM
From: Bill Jackson	Respond to of 275872

Nick, Ion implantation shoots ions of whatever element you want into the Si. Depending on the speed they will come to rest on average at some depth. Normally they would not be used as a surface coater. Epitaxially grown layers refer to layers on a surface that lay themselves down in a way that matches the crystal structure of the bottom layers. Since Si28 and common Si share the same structure and charge this will work to grow a perfect crystal layer of Si28 on top of the Si common. This probably means that the Si28 is for hotspot control and is not needed in depth, and that is cheaper and more miserly of the scarce resoiurce that is Si28. For the very fastest chips they may want Si28 all the way through. Bill