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To: Zeev Hed who wrote (1001)	12/6/2000 11:32:56 PM
From: Joe NYC	Respond to of 1099

Zeev, Here is a post with links to more rumors of Si28 being used by AMD: Message 14961795 Presumably, the "new super silicon process with a much smaller business partner" is ISON. Joe

To: Zeev Hed who wrote (1001)	12/6/2000 11:48:00 PM
From: Bill Jackson	Read Replies (1) \| Respond to of 1099

Zeev If the Si heated uniformly that would be the case, howevere it is a sea of hot spots where many areas are higher than the average. SInce the depth of the hot spots is amll compared to the epi thickness then a thin layer will dissipate the heat laterally as well as vertically to the heat sink and so the hot spots are cooled further below their peaks. That means they can now drive them faster until they reach their previous temperature at a somewhatt higher frequency. So you may be ale to go from 1200 to 1500 with a epi layer and the same CPU will go from 1200 to 2000 with bulk Si28. Of course they streamline everything in the heat path to reduce these resistances with copper plates, extra flat work, extra good thermal pastes with free metals like silver and the gap is made as this as possible. On top of this is copper interconnect, .13 design rules and lower voltage of operation. better CPU design will halp too. However the Si28 seems to be critical, sp with SOI as that SOI will add some thermal resistance that needs to be countered in some way. Many steps forward and one back. Even if doping throas away some of the thermal benefits the thick ness of the doped layer is so small that it adds little to the overall thermal resistance. How thick are epi layers compared to the doped layers, 20:1? Bill

To: Zeev Hed who wrote (1001)	12/27/2000 8:06:38 PM
From: dj_mich	Respond to of 1099

isonics.com Q. How can a thin layer of silicon-28 affect the performance of a computer chip? A. The active transistors in a computer chip are manufactured in the top few microns of a wafer. Today, all advanced microprocessors use epitaxial wafers because the epitaxial layer can be made with fewer defects than a bulk wafer. The epitaxial layer has fewer crystalline defects (dislocations, vacancies, micro-voids, etc.) and a more uniform distribution of dopant atoms because the layer is grown from a gas mixture rather than from a large boule of silicon. By using an isotopically pure silicon layer, the crystal structure is more perfect, and less scattering of the electrons takes place, generating less heat and electromagnetic noise.