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To: DJBEINO who wrote (8997)12/7/2000 7:14:46 AM
From: DJBEINO  Read Replies (1) | Respond to of 9582
 
NEW patent added to ALSC

United States Patent 6,157,587
Reddy, et. al. Dec. 5, 2000

Data sense arrangement for random access memory
Abstract

A sensing circuit (30) for a random access memory (10) is disclosed. A CMOS sense amplifier (32) is coupled between bit line pairs which connected to I/O lines by a passgate (N4/N5). A pair of cross-coupled transistors (N6/N7) activated in synchronism with the passgate (N4/N5) is also disposed between the bit lines. The I/O line pairs each include a pair of cross coupled p-channel transistors (P4/P5). The combined action of the cross-coupled pairs (N6/N7) and (P4/P5) increase the sensing speed of the sensing circuit (30).

Inventors: Reddy; Chitranjan N. (Los Altos Hills, CA); Patel; Vipul (San Jose, CA).
Assignee: Alliance Semiconductor Corporation (Santa Clara, CA).
Appl. No.: 965,431
Filed: Nov. 6, 1997

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