To: Kirk © who wrote (40563 ) 12/7/2000 3:21:12 PM From: Proud_Infidel Read Replies (1) | Respond to of 70976 Japan's x-ray lithography project will be shut down, says official By Jack Robertson Semiconductor Business News (12/07/00 08:50 a.m. PST) TOKYO -- The Japanese Proximity X-ray Lithography (PXL) project will be shut down at the end of the current fiscal year, which ends March 31, 2001, due to a lack of funds, said an official at a technical session during the Semicon Japan trade show here today. The five-year PXL project has developed a prototype stepper for Canon Inc., and it advanced the capabilities of x-ray mask technology, but the effort is also running out of money, said Yasuji Matsui, PXL research manager for the Association of Super-Advanced Electronic Technology (ASET). He said Japanese companies in the program had been trying to form a new consortium to continue the work. Following his presentation at Semicon Japan, Matsui told SBN that that Canon and Mitsubishi Electric Corp. are trying to enlist other companies to join in continuing the x-ray lithography work. He said further development is needed in x-ray masks, defect inspection, and repair before PXL could be commercialized. Meanwhile, another ASET advanced lithography project in Extreme Ultraviolet (EUV) technology is also seeking greater funding to accelerate its development. The current timetable calls for alpha and beta tools to be developed through 2004, with first commercial EUV systems to be available in 2007. A concerned member of the audience questioned if the 2007 target date for production systems wouldn't be too late, coming several years after the U.S. EUV program is slated to have gear ready. Maski Ito, chief EUV researcher at ASET, said the Japanese program could be accelerated if it received more government funding. "We need to encourage public opinion to gain greater support," he told the Semicon Japan session. Ito said ASET has already determined that tantalum nitride is the preferred material for absorbers in the special EUV masks. He also said ultra-thin resists now used for 248-nm optical lithography will work for EUV. ASET has also developed a narrow field of field mini-exposure tool, which will be used in experiments leading to a full field of view alpha tool prototype. "We have enough experience already to believe we can achieve [a field size of] 30 nanometer [0.03-micron] without phase shift masks or optical proximity correction," he said.