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To: Proud_Infidel who wrote (40753)12/13/2000 10:44:52 AM
From: Proud_Infidel  Read Replies (1) | Respond to of 70976
 
STMicro plans 0.10-micron processes for 300-mm fabs by 2003

By Mark LaPedus
Semiconductor Business News
(12/13/00 05:45 a.m. PST)

SEDONA, Ariz. -- During a series of technology briefings here, STMicroelectronics announced it has begun developing prototype chips based on a new 0.12-micron CMOS process technology, which includes copper interconnects and low-k dielectric insulators.

The European chip maker also disclosed plans to deploy 0.10-micron technology in its 300-mm wafer fabs by 2003. During the company's technology conference at a resort in Sedona, officials said STMicroelectronics is now narrowing down its site selection for a 300-mm production fab in either France, Italy, or Phoenix, Ariz. (see Dec. 12 story). That 300-mm production fab and a pilot line facility being set up jointly by STMicroelectronics and partner Philips Semiconductors in Crolles, France, will use the next-generation 0.10-micron (100-nanometer) technology.

"We are on a par with the most aggressive roadmaps [in the semiconductor industry]," said Philippe Magarshack, vice president and director of design automation for integrated systems at ST.

The company plans to ramp up its new CMOS process technologies in stages. First, it will migrate to the new--and somewhat unique--0.12-micron technology node. This process, dubbed HCMOS9, is in the prototyping stage, with production slated for late-2001, said Magarshack, during a presentation at STMicroelectronics' conference in Sedona on Tuesday.

The 0.12-micron process is somewhat similar to 0.13-micron technology. "It's basically the same as the 0.13-micron technology node," he said.

Analysts attending the meeting speculated that ST selected the 0.12-micron figure in order to give the perception that it is slightly ahead of its competitors in terms of process technology.

In fact, several IC technology leaders--such as IBM Microelectronics, Intel Corp., Taiwan Semiconductor Manufacturing Co. Ltd., United Microelectronics Corp., and others--have only recently announced their respective 0.13-micron process technologies.

In reality, though, STMicroelectronics appears to be slightly behind those competitors. In the 0.13-micron race, IBM, Intel, TSMC, and UMC are in various stages of offering prototypes with this class of technology.

STMicroelectronics said it will ramp up its technology over time. "We will offer prototype chips[based on 0.12-micron technology] next quarter," Magarshack said. "It will take three or four quarters before get the technology into production."

Until then, the company will continue to offer its current leading-edge process technology. Dubbed HCMOS8, the process is a 0.18-micron technology-which does not include copper-interconnects and low-k dielectric features.

The HCM0S9 features a six-layer copper-interconnect process-which will enable the development of new and advanced analog chips, communications ICs, embedded memory products, radio frequency (RF) devices, and other products.

The company is making a strong push in the embedded memory space. For example, it hopes to offer combination stacked-cell embedded DRAM and logic products for use in several applications, such as communications equipment, disk drives, games, and printers.

Following its 0.12-micron process technology, the company will roll out its next-generation node. Dubbed HCMOS10, the 0.10-micron process will be deployed in its 300-mm wafer fabs by 2003. It will also include copper-interconnects and low-k dielectrics as well.