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To: Steve Lee who wrote (17653)	12/26/2000 2:05:11 PM
From: Zeev Hed	Respond to of 60323

A little, maybe, but it is really a function of the "writes" changing and degrading the properties of each cell. I would assume that as smaller dimensions are implemented and thus lower writing energies used, this could increase somewhat, I have no idea if and by how much. There are very few applications that require more than 100,000 writing cycles, unless, of course, one starts and uses the flash as a "scratch pad" rather than an "intermediate" memory medium. This, of course, until you want to actually replace normal DRAM with non erasable memory (for instance if you want your computer to be booted even when the power is off). Zeev