Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : Kopin Corp. (KOPN) -- Ignore unavailable to you. Want to Upgrade?

To: Uncle Frank who wrote (1410)	1/9/2001 8:55:16 AM
From: John J. Riley	Read Replies (1) \| Respond to of 1820

Kopin News Release... Kopin Announces Advanced Carbon-Doped InP-based HBTs; HBTs Developed for 40 GB/s Fiber Optics Networks and Next Generation Wireless Handsets TAUNTON, Mass.--(BUSINESS WIRE)--Jan. 9, 2001--Kopin Corporation (NASDAQ: KOPN), the leading provider of gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) for wireless and fiber-optic telecom applications, today announced the introduction of carbon-doped Indium Phosphide (InP)-based HBTs. These transistors are considered a keystone technology for components used in wireless and high-speed optical communication. "InP is the next generation semiconductor after GaAs," stated Dr. John C.C. Fan, Kopin's president and chief executive officer. "Compared to GaAs HBTs, InP HBTs demonstrate superior speed, operating voltage, power efficiency and thermal properties. We are currently growing carbon-doped InP HBTs in our production organometallic chemical vapor deposition (OMCVD) systems, the preferred technique for large-scale manufacturing. This major breakthrough enables a new generation of high-performance, reliable, cost-effective InP HBT circuits for a wide variety of exciting applications, including 40-gigabit per second (Gb/s) fiber optic circuits (OC 768) and efficient power amplifiers for third-generation wireless phones." "Our proprietary, and patent-pending process overcomes previous difficulties to incorporate sufficient quantities of carbon into InP HBTs, especially by OMCVD. Although beryllium-doped InP HBTs have been grown by molecular beam epitaxy (MBE), carbon-doped HBTs are preferable because carbon is a more stable dopant." "The addition of InP HBTs to our product mix provides our customers and partners with a wider selection of devices," Fan continued. "We are now beginning to sample InP HBTs with select Kopin partners." Dr. Roger E. Welser, Kopin's Director of Transistor Technology, commented, "We have achieved active carbon doping levels exceeding 1 x 1019/cc, a critical threshold for many circuit applications, and are steadily increasing the doping level for even higher speed circuits. The transistor characteristics of large-area InP HBTs grown and fabricated at Kopin are excellent, suggesting very high material quality is obtained by our OMCVD process."