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Technology Stocks : SI Diamond Technology (SIDT) -- Ignore unavailable to you. Want to Upgrade?

To: John Curtis who wrote (577)	5/3/2001 11:17:39 AM
From: Savant	Respond to of 623

SI Diamond Technology, Inc. Announces the Successful Operation of A Nanotriode-Type Transistor Utilizing Carbon Nanotubes AUSTIN, Texas, May 3, 2001 /PRNewswire via COMTEX/ -- SI Diamond Technology, Inc. (OTC Bulletin Board: SIDT) through its subsidiary, Field Emission Picture Element Technology, Inc. (FEPET) today announced that it has operated a new nanotriode-type transistor from carbon nanotubes. Carbon nanotubes, which resemble nanowires, are 500 times smaller than today's silicon transistors. While others are demonstrating transistors operating in a solid-state format using the semiconductor properties of carbon nanotubes, FEPET's nanotriode-type transistor exploits the cold electron emission from these films in a vacuum microelectronic structure. It is FEPET's belief that the nanotriode type transistor that is a vertical device will offer much denser packaging than lateral structured transistors. The structure of the nanotriode-type transistor is based on narrow vertical trenches in silicon having a special cathode metal at the bottom and ending with high quality gate dielectric coated with a metal. The carbon nanotubes are grown by selective methods in these trenches. Datacurves of the nanotriode-type transistor are presented on the website www.carbontech.net under the "Nanotriode Type Transistor" section showing operations at gate voltages as low as 10 volts achieving currents as high as 5 microamperes. "Our research and development efforts show that carbon nanotubes are a valid approach to microelectronic miniaturization beyond silicon technology," said Dr. Zvi Yaniv, President and COO. "We hope that the achievements of FEPET and others will spur the study of carbon nanotubes in the field of micro and nanoscale electronics," said Marc Eller, Chairman and CEO.