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Technology Stocks : Intel Corporation (INTC) -- Ignore unavailable to you. Want to Upgrade?

To: Elmer who wrote (136962)	6/8/2001 12:08:39 AM
From: THE WATSONYOUTH	Read Replies (1) \| Respond to of 186894

Physical cross sections. Well, it is apparent that fingolfen has chosen to punk out of this discussion..... so I will respond to you. To make the conclusions that you, Engel and fingolfen have made based on a physical cross section alone is ludicrous. Do you realize how much information (hard data) you would require to make a reasonable evaluation of a device design and its relative worth vis-a-vis a competitive (Intel) design? Even if this information is available, it is clear that none of you could interpret it in any meaningful way. For example, two identical devices in terms of physical poly dimensions can have very different performance characteristics. Differences in Vcc / overlap capacitance / gate capacitance / series resistance / gate oxide thickness / gate activation / threshold voltages / electrical channel lengths / Ion characteristics / Ioff characteristics and spec. / etc. etc. etc. must also be taken into account. I don't recall seeing any of these published. These constant claims that somehow AMD is using .13um like devices in their .18um generation is ridiculous. The .13um device generation will be characterized by a gate oxide thickness on the order of 15A to 17A with a corresponding operating voltage of perhaps 1.2V to 1.35V. No way is AMD in that regime at this time. I would expect the physical poly dimensions to be in the range of 850A to 600A with electrical channel lengths of perhaps 750A to 500A. A minimum .18um device (depending on device design) could easily be down to 800A physical poly. You guys are simply blowing hot air without any basis of fact. And fingolfen goes one step further by accusing Dan3 of the same thing. Talk about being hypocritical. THE WATSONYOUTH