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To: fingolfen who wrote (138081)	6/25/2001 4:43:48 PM
From: THE WATSONYOUTH	Read Replies (1) \| Respond to of 186894

I'm not sure I agree with that assessment. The details are very sketchy. I'm quite sure you don't have a clue what you're talking about. These Si/Ge devices are bipolar for high speed RF and other mixed signal applications. THE WATSONYOUTH

To: fingolfen who wrote (138081)	6/25/2001 11:11:13 PM
From: milo_morai	Read Replies (2) \| Respond to of 186894

Well someone agrees with me e-insite.net I enjoyed this part ..."Our view is that there is a basic shift taking place in the semiconductor industry, whereby the driver for technological advancements is no longer the PC but other applications such as high-speed networking. This is a case in point,” he said. Intel is talking 20GHz microprocessors in 2007 that will only be possible with new forms of lithography and gate-oxide materials, the spokesman said, while IBM can take its bipolar HBT transistors with SiGe and yield 100GHz chips by 2003, without lithography shrinks."