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To: tcmay who wrote (138135)	6/26/2001 1:23:00 AM
From: THE WATSONYOUTH	Respond to of 186894

Tim here: And ask them whether the SiGe devices are intended for chips with more than 100 million active devices. (Talk of "mixed-mode" is misleading, for obvious reasons.) Given that power dissipation remains a problem even with today's CMOS processors, ask yourself how the "always on" behavior of SiGe bipolar transistors fits into this model. Sure, GaAs and SiGe are useful for "front-end" functions, close to antennas and other transceivers. IBM never claimed to use the bipolar devices to replace VLSI CMOS. That's absurd. They are clearly for "front end" functions. But, show me the "front end" application that requires more than a few 100K bipolar devices. There aren't any. But... the integrated BiCMOS process does allow for more than 100 million device levels of integration. The value of the Si/Ge is in the fact that it integrates seamlessly into a conventional CMOS process. If you don't see the potential value in such a process, you really are out of date. You should understand what is being offered here before you foolishly dismiss it. THE WATSONYOUTH