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To: Yousef who wrote (50143)	8/7/2001 1:43:19 AM
From: Zoran	Respond to of 275872

Yousef, In the famous CMOS scaling talk Yuan Taur mentioned that fully depleted SOI devices scaled much worse than partially depleted ones therefore he couldn't understand that some people were still squandering time working on FDSOI. It turned out that quite a few people in Oregon didn't have anything better to do than to work on a device that has been doomed by IBM before anybody made them. Intel made a 50nm device that gives 650uA/um drive current for PMOS at only 9nA/um leakage at 1.3V. If you compare this to IBM asymmetric gate FinFET where they got 300uA/um NMOS drive current at 100nA/um leakage one should really doubt IBM's double gate evangelism. On the other hand Intel has the best performance SOI device that can be easily further improved by using metal gates and undoped channel. Although manufacturability of ultra thin SOI devices is still unknown and speculative it is quite feasible that small amount ultra high performance microprocessors can be made in this technology.