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To: brushwud who wrote (51597)8/17/2001 6:21:48 PM
From: Jim McMannisRespond to of 275872
 
Brushwud,

Interesting, I just noticed we went to the same school...

Jim



To: brushwud who wrote (51597)8/17/2001 9:34:27 PM
From: YousefRespond to of 275872
 
brushwud,

Re: "I think CMP (Chemical Mechanical Planarization) is basically a
power-sander to polish the surface of a wafer between adding layers
of metal interconnect (wiring)."

You are correct ... As the name also implies, there is a chemical
etch as well as a mechanical polish in this tool. Thus, the slurry
used as well as the pads and down force are very important in determining
the across wafer and iso/dense "dishing" uniformity. This operation
originally was used for planarizing the oxide layers in the backend (upper layers)
interconnect. This has now been extend to polishing the STI (shallow trench
isolation), poly and copper interconnect. The real nice thing about
CMP is that it also polishes any particulates/defects. Thus, it
is inherently a lower defect density process as compared to etching. IBM
pioneered this technology and basically gave it to the industry with
their membership in Sematech.

Make It So,
Yousef



To: brushwud who wrote (51597)8/19/2001 12:36:00 AM
From: reynosoRespond to of 275872
 
brushwud - Thank you for explaining the concept of CMP - I have a better appreciation for what it does now.
Reynoso