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Technology Stocks : Intel Corporation (INTC) -- Ignore unavailable to you. Want to Upgrade?

To: fingolfen who wrote (142087)	8/21/2001 11:35:59 PM
From: THE WATSONYOUTH	Read Replies (2) \| Respond to of 186894

When you invert the gate region, the electron flow is not along the top down length of the transistor, rather it's along the width. That width, or "length" of the inversion region, is the most critical parameter for speed (though certainly not the only one). The convention in the industry is to say channel length/gate length/device length when one is talking about electron flow across the inversion region. (never width) The device width/gate width/channel width refers to the width of the device between isolation regions. The terms are never mixed. That's the way it's been as long as I can remember. THE WATSONYOUTH