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To: R F B, Jr. who wrote (827)8/23/2001 9:26:06 PM
From: Chuca Marsh  Read Replies (1) | Respond to of 872
 
Yeah we all have said things in the past. All: MAZZ Quote: ( I should talk ) Every time there are whispers in the shadows for the desert dirt's, it blows up for shareholders...
Read the replies from 1998:
Message 4571833
To:Chuca Marsh who wrote (1742)
From: Richard Mazzarella Saturday, May 23, 1998 11:18 AM
View Replies (2) | Respond to of 5060

Chuca, why you beating around the bush? Tell us their names. It can't be private information if they were at the shareholders meeting and doing public business with MGAU. Please don't have me waste Mike's time asking him. Every time there are whispers in the shadows for the desert dirt's, it blows up for sharehold
..//..
2 Replies:
2 Replies to Post 4571833

To:Richard Mazzarella who wrote (1744)
From: Karl Zetmeir Saturday, May 23, 1998 11:44 AM
View Replies (2) | Respond to of 5060

Does it really matter who owns Galleon?If the property was worth procuring ... it was worth procuring regardless of ownership.



To:Richard Mazzarella who wrote (1744)
From: Chuca Marsh Saturday, May 23, 1998 5:38 PM
Respond to of 5060

<<..why you beating around the bush? Tell us their names. ..>> WHY??? ? Because, I have not talked to them since last week, and those NAMES trusted me with UMPTEEN THOUSAND dollars of THEIR money from starting last August 15th when I was going around fund raising to start what I started then. The books balance and so do / does the FACT that they trusted me, so I must trust them and their intentions as to disclosure of presonal information. Any indiscression on my part would be WRONG, hope everyone can see that.
Buy the way, Frank sat in front of me, no I did not kick on his chair/ wisper secret verbage in his ear/ but I did introduce him to a fellow Maxamgold AGMer who came over to talk( at MG AGM). Was that secretative? I don't think so. But who am I to know? I am not a JV guy with anyone but the one company ( so far & it is not MG here but it it is HERE on S.I. & it is not anywhere as such near my near at Galleon type claims-no- I have no authority to tell either, democracy in action-we simply haven't voted and half are gone for the Memorial Day Weekend; Happy Memorial Day- More to follow when it is time- Take care and remember without Speculators there would be no Capital Gains!). I am just a Placer Association guy, that is all.
Chuca


..//..
Chucka/Chuca it matters not to me.=mc2rd, Stuff Happens Stuff Doesn't Happen. SHSH it(RISK is still the final FRONTIER ) Printandthinkfolks, I think. THEREFORE..I am. First or last, it is just as POWERFULL. To the HURT we all felt. Hummn -why am I talking that way. I hurt at so many dirts..... only longs can fill in the words that they want to hear. I don't want....hush...I don't want any more first hurts....last hurts.
PPS: & it is not anywhere as such near my near at Galleon type claims-no- I have no authority to tell either, democracy in action-we simply haven't voted and half are gone for the Memorial Day Weekend; Happy Memorial Day- More to follow when it is time- Take care and remember without Speculators there would be no Capital Gains!). I am just a Placer Association guy, that is all.
PPPS- at one time Galleon Claims were near ...not now I suspect well notbe near that current larger claim LOL.
PPPS - I now\ study CHIP TECH in open PITS LOL:
biz.yahoo.com
Read the Gallium News this week I like best it Blue Skyed TODAY at a Buck NEAR S/Px CMG:CDNX
RM dont click here
cdnx.com TYPE in GCU on left side bar
Then TECH in CREY uses that GALLIUM WORD...not to confuse the BOAT LOADS:
Monday August 20, 8:46 am Eastern Time
Press Release
SOURCE: Cree, Inc.
Cree's GaN Microwave Devices Launch Into Space
Space Shuttle Carries GaN Materials and HEMT Devices Into Orbit Test
DURHAM, N.C., Aug. 20 /PRNewswire/ -- Cree, Inc. (Nasdaq: CREE - news)
announced today that its gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) microwave devices and GaN HEMT epiwafer materials were
successfully installed aboard the International Space Station after being
launched into space by the Space Shuttle Discovery. The GaN HEMT transistors
and material are being evaluated to determine their radiation hardness over
existing semiconductor materials for future satellite applications. The
materials and devices were incorporated into the Materials International
Space Station Experiment (MISSE) for the purpose of determining how various
materials endure the environment of space.

The Space Shuttle Discovery delivered the MISSE to the International Space
Station after it was launched on August 10, 2001. The experiment was mounted
onto the outside of the space station's airlock during the first spacewalk of
the mission on August 16, 2001. After long-term exposure to space conditions,
the MISSE will be retrieved and returned to earth on a future shuttle mission
for test and evaluation.

Thomas Jenkins, of the Sensors Directorate of Air Force Research Laboratories
(AFRL) stated, ``We are excited about the rapid progress achieved for GaN
microwave devices and are anxious to determine their applicability to
satellite communications and other space-based applications as a result of
this experiment.'' The devices and material used are the result of a joint
collaboration between Cree and the Sensors Directorate of the AFRL under a
Dual Use Science and Technology program funded by the Department of Defense
and Cree. The objective of the collaboration with the Sensors Directorate is
to develop wide bandgap semiconductors for microwave technology that must
operate under extreme conditions, such as a crowded or hostile
electromagnetic spectrum and limited environmental controls due to
constraints of mass, volume, or prime power. The insertion of GaN into the
flight was spearheaded by the Materials and Manufacturing Directorate of
AFRL, which organized the MISSE for this shuttle mission.

Cree has previously reported record results in terms of total power for GaN
microwave devices, 50 watts at 10 GHz, and also demonstrated the first
Monolithic Microwave Integrated Circuit (MMIC) in GaN, which was grown on
Cree's semi-insulating SiC substrate. These devices have now achieved 24
Watts of pulsed RF output power at 16 GHz, about three times the highest RF
output power of gallium arsenide (GaAs) MMICs available for this frequency
range.

Dr. John Palmour, Cree's Director of Advanced Devices commented, ``The
inclusion of our GaN microwave technology in this advanced experiment not
only demonstrates Cree's leadership in this field, but also highlights the
emerging application area of broadband satellite communications for GaN
microwave devices.''

More information on the MISSE experiment and Discovery's Flight STS-105 may
be found at:

spaceflight.nasa.gov , and at:

misse1.larc.nasa.gov /

North Carolina-based Cree, Inc. develops and manufactures semiconductor
materials and devices based on silicon carbide (SiC), gallium nitride (GaN)
and related compounds. The company's products include blue, green and UV
LEDs, RF power transistors for use in wireless infrastructure applications,
Schottky diodes for power conditioning and switching, SiC crystals used in
the production of unique gemstones and SiC wafers sold for use in production
and in research and development. Cree has new product initiatives based on
its experience in SiC and GaN-based semiconductors, including blue laser
diodes for optical storage applications, high frequency microwave devices for
radar and other communications systems. For more information on Cree, visit
cree.com.

This press release contains forward-looking statements involving risks and
uncertainties that may cause actual results to differ materially from those
indicated. Actual results could differ materially due to a number of factors,
including the possibility we may be unable to develop commercial products
based on the technology discussed in the release; the potential lack of
customer acceptance even if products are developed; the possibility we may be
unable to manufacture such products with sufficiently low cost to offer them
at competitive prices or with acceptable margins; and other factors discussed
in our filings with the Securities and Exchange Commission, including our
report on Form 10-K for the year ended June 25, 2000 and subsequent reports.

SOURCE: Cree, Inc.
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SPACE THE FINAL CHIP GALLIUM FRONTIER! RISK/SPACE and CHIP TECH.