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To: Saturn V who wrote (142654)	9/3/2001 6:45:54 PM
From: wanna_bmw	Respond to of 186894

Saturn V, Re: "the power dissipation [of BJT transistors] is so much higher" There may have been advances in BJT design since last time you were aware. The BJT project that I talked about in my previous post is said to perform quite favorably as far as power dissipation goes. I remember seeing a diagram once of previous BJT designs, as opposed to current ones. It used to be that the base, collector, and emitter were created by using wells in a silicon or silicon germanium substrate. Now, they are built on top of the substrate as layers. Maybe one of the process experts on this thread can illuminate the topic further. wanna_bmw