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Technology Stocks : Applied Materials No-Politics Thread (AMAT) -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (27)	10/23/2001 12:05:01 PM
From: Proud_Infidel	Read Replies (1) \| Respond to of 25522

TSMC says 300-mm fab shows acceptance yields with 0.13-micron copper process Semiconductor Business News (10/22/01 15:04 p.m. EST) HSINCHU, Taiwan--Taiwan Semiconductor Manufacturing Co. Ltd. today claimed its new Fab 12 here has become the industry's first full-scale 300-mm wafer plant capable of processing 0.13-micron ICs with acceptable volume-production yields. Fab 12 has produced its initial 0.13-micron SRAM devices using an all-copper metal interconnect process with yield levels equal to TSMC's 200-mm (8-inch) fabs, according to the silicon foundry company. The world's largest silicon foundry company said it has taped out one customer's 0.13-micron SRAM product for production in Fab 12 and several other devices are now scheduled to be produced in the 300-mm (12-inch) wafer fab. Qualification of these products will be completed in the first quarter of 2002, said TSMC. TSMC said Fab 12 has been designed to produce 25,000 twelve-inch diameter wafers per month. The installed capacity at the end of 2001 is expected to reach 4,500 wafers per month. Fab 12 is also a site for the development of TSMC's 0.10-micron technology. It will also act as the R&D center for all future technologies at TSMC. "Based on a successful technical transfer from our 300-mm pilot line at TSMC Fab 6 [in Tainan], the success of TSMC Fab12 has demonstrated that we can support customer demand for 0.13-micron technology in a 300-mm manufacturing environment," said Genda Hu, vice president of corporate marketing at TSMC. Last August, TSMC announced that Fab 12 had achieved high yield levels in pilot production of several 0.15-micron devices, including a customer product.