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Technology Stocks : Applied Materials No-Politics Thread (AMAT) -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (300)	11/6/2001 8:13:26 AM
From: Proud_Infidel	Read Replies (1) \| Respond to of 25522

Samsung to Strengthen Memory Biz, Miniaturize Patterning and Enlarge Capacity November 6, 2001 (TOKYO) -- In contrast to Japanese vendors backing out of the memory business, Korea-based Samsung Electronics Co., Ltd., a DRAM industry giant, unveiled its silicon memory strategy for the future. The company will strengthen the memory business and enhance its competitive edge as well as cultivate new markets. The baseline policy of its DRAM business is to move fast to increase production of higher capacity memories. Those high-capacity memory products (256M/512Mb) currently account for about 30 percent of Samsung's DRAM shipments, but the company it plans to raise that to 45 percent by the end of 2001. Samsung will further intensify its effort in specific products such as DRAMs conforming to the Direct Rambus specifications, in which it already controls more than 60 percent of the market share this year, and synchronous DRAMs with a DDR mode being produced in large volumes of 10 million units per month on the 128Mb-basis. In 2002, it will push forward with sales of both types in order to command a higher share in the market. In terms of applications, the ratio of DRAM shipments for PCs will be reduced. Instead, a production percentage of the semiconductors for telecommunications equipment and consumer digital electronic devices will be pulled up to 30 percent at minimum, from the current 21 percent, by 2005. Samsung has so far engaged in the SRAM business by providing memory chips alone, but it will place more weight on multiple chip packages (MCPs) that can easily add value. Within 2001, it plans to complete assortment of 15 different types of memory as a lineup for MCPs. In parallel, it is going to intensify its high-speed SRAM business for network equipment. Specifically, the target is set for boosting SRAM shipments for network equipment from the current shipment ratio of 20 percent to 35 percent by 2005. Samsung also aims at leading the EEPROM market by achieving products with larger capacity NAND. In September 2001, it began commercial production of a 1Gb NAND type of flash EEPROM using the 0.12-micron process. The 1Gb products will be loaded onto a memory card (CompactFlash) to expand its capacity to 512MB, which will be brought out by the end of 2001. The company is going to cultivate a new market for the NOR type of flash EEPROM in addition to the NAND type. The core competence of Samsung shoring up each memory strategy is a technology for super minute patterning. It has already started commercial production of 512Mb DRAMs using the 0.12-micron process, and will introduce the 0.1-micron process during 2002. By 2004, it will be launching mass production of memories with 0.07-micron process technology. (Nikkei Electronics)