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Technology Stocks : Applied Materials No-Politics Thread (AMAT) -- Ignore unavailable to you. Want to Upgrade?

To: Gottfried who wrote (313)	11/6/2001 2:22:17 PM
From: Math Junkie	Read Replies (1) \| Respond to of 25522

Fed announces 50 basis point cut. Decision unanimous.

To: Gottfried who wrote (313)	11/6/2001 2:31:55 PM
From: Proud_Infidel	Respond to of 25522

The Federal Open Market Committee decided today to lower its target for the federal funds rate by 50 basis points to 2 percent. In a related action, the Board of Governors approved a 50 basis point reduction in the discount rate to 1-1/2 percent. Heightened uncertainty and concerns about a deterioration in business conditions both here and abroad are damping economic activity. For the foreseeable future, then, the Committee continues to believe that, against the background of its long-run goals of price stability and sustainable economic growth and of the information currently available, the risks are weighted mainly toward conditions that may generate economic weakness. Although the necessary reallocation of resources to enhance security may restrain advances in productivity for a time, the long-term prospects for productivity growth and the economy remain favorable and should become evident once the unusual forces restraining demand abate. In taking the discount rate action, the Federal Reserve Board approved the request submitted by the Board of Directors of the Federal Reserve Bank of Richmond. federalreserve.gov <<<<<Edit: Sorry for posting twice, I did not see Ian had already posted it.>>>>>

To: Gottfried who wrote (313)	11/7/2001 8:24:25 AM
From: Proud_Infidel	Respond to of 25522

Motorola Creates New Semiconductor Material Motorola, Inc has announced that its lab's scientists have developed a new type of semiconductor material (called III-V) that combines the best properties of silicon technology with the speed and optical capabilities of high-performance compound semiconductors. According to the company, the discovery solves a problem that has been vexing the semiconductor industry for nearly 30 years, and opens the door to significantly less expensive optical communications, high-frequency radio devices and high-speed microprocessor-based subsystems by potentially eliminating the current cost barriers holding back many advanced applications. The technology enables very thin layers of III-V semiconductor materials (which include gallium arsenide, indium phosphide, gallium nitride and other high-performance / light-emitting compounds) to be grown on a silicon substrate. Until now, this has been a virtually impossible task due to fundamental material mismatch issues. Specifically, the underlying crystalline structures of silicon and the various III-V compounds do not match. As a result, previous industry attempts to combine them resulted in dislocations or "cracks" in the material as the two mismatched structures struggled to bond. The key to solving the problem was to introduce an intermediate layer of material between the silicon and the III-V material. The solution was found in discovering exactly the right "recipe" for a material that would easily bond with both silicon and GaAs, reducing the strain between the two target materials in the process. (November 2001 Issue, Nikkei Electronics Asia)