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Technology Stocks : Advanced Micro Devices - Moderated (AMD) -- Ignore unavailable to you. Want to Upgrade?

To: Ali Chen who wrote (64179)	11/21/2001 1:19:23 AM
From: milo_morai	Read Replies (1) \| Respond to of 275872

Ali, thank you for the links.. I always wish to read up more as well. I've not had to apply my Electronics background on a designing level for over a decade as my primary job is in Telecommunications and the focus is Optics and OC's, HSD networking, HFC plant, DS circuits, DCS and Circuit based switching which is slowing moving to Packet based switching. But I still like these type of discussions as I enjoy learning and understanding the barriers that AMD and INTC face. Milo

To: Ali Chen who wrote (64179)	11/21/2001 1:32:42 AM
From: milo_morai	Respond to of 275872

<font color=blue>Where is TWY!. This URL is interesting. It talks about diamond google.com or the pdf version www-device.eecs.berkeley.edu Figure 9: Diamond may allow for further device scaling as it has a lower dielectric constant than silicon. Diamond material parameters: k=5.7, Eg= 5.4eV, m=0.2. All devices have Tbody=5nm, Tox,eq=10Å, VDD= 1V, VT=0.4V. Figure 7: Intrinsic gate delay (CV/Ion) vs. Ioff. Despite series resistance introduced by the thin body and graded S/D doping profiles, CV/Ion can still be scaled down. Tox,eq=10Å. Figure 5: Ioff will increase as VT is scaled down because the channel potential barrier height is reduced. VT is defined at Ids=50nA/mm. N +Source +Drain T spacer body L gate Gate P Figure 2: Off-state leak- age is comprised of therm-T ionic emission above and quantum tunneling through the channel potential rier. Both are important in the 10nm regime. Figure 8: A semiconductor material with a lower k reduces DIBL and may allow for contin- ued device scaling. Adjusting m and Eg do not significantly affect Ioff. All devices have Tbody=5nm, Tox,eq=10Å, VDD=1V, VT=0.4V.