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To: StanX Long who wrote (56957)	12/5/2001 4:00:00 AM
From: StanX Long	Read Replies (1) \| Respond to of 70976

Wednesday December 5, 3:06 PM NEC Develops Power Transistor With 50% More Output sg.news.yahoo.com TOKYO, Dec 5 Asia Pulse - NEC Corp. (TSE: 6701) announced the development of a new type of power transistor for cell phone base stations that boasts a power output of 113 watts, and it hopes to have a practical version ready by April 2003. Made from a gallium-nitride material, the transistor has a simpler structure than conventional gallium-arsenide transistors and can produce signals that are 50 per cent more powerful. Power transistors are used in wireless base stations to collect and amplify the signals received by the station. With the popularization of cellular phones, there is growing demand for power transistors that can provide higher output. Gallium-nitride is a promising material in this regard, but the heat generated during operation can lower the performance of the transistor. NEC overcame this problem by sandwiching a metal film between the sources to evenly distribute heat, and by polishing the sapphire substrate to a thickness of just 50 microns to allow the heat to escape easier. The company also placed a barrier layer directly under the electrodes to block out contaminants, enabling the transistor to operate at high voltage. (Nikkei)