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To: Estephen who wrote (80624)1/20/2002 3:03:24 AM
From: Don Green  Read Replies (1) | Respond to of 93625
 
Rambus: The New Richard Hatch?

Here is an excerpt from an article in the Feb 2002, issue of Maximum PC Magazine

(Page 12) Intel finally goes DDR.

In a related article on the same page is another small article. Here is an excerpt

Rambus: The New Richard Hatch?

(Intel plays a game of “Survivor” with all it’s memory options

If Intels memory roadmap were a game show, it would definitely resemble ”Survivor”. Currently, three different memory types-PC133, DDR, RDRAM are vying for Intel’s support, if not the Ultimate Win…...

Surprisingly industry experts say RDRAM will survive. But don’t get too cozy with PC133 if you want to build alliances.

RDRAM is suddenly a new OEM Favorite.

Both Intel and some large OEM’s we've interviewed tell us the faster-clocked “Northwood” version of the P4 offers better performance when paired with high-speed, serialized RDRAM. They say DDR Bottlenecks Nothwood as CPU speeds increase, whereas RDRAM doesn’t.


And to help grease the wheels of progress, Intel is expected to push RDRAM from 800MHz to 1066MHz by upping the frontside bus speed of the Pentium 4 later this year.
So with DDR firmly in the middle and low end, and RDRAM at high end, it will likely be the kinder and gentler PC133 that gets voted off the motherboard. The Tribe has spoken.

dg> Other than this article most articles in this magazine have been pretty negative toward RDRAM.



To: Estephen who wrote (80624)1/21/2002 8:46:04 AM
From: SilentZ  Respond to of 93625
 
>LIST OF BASHERs; Update - Public service courtesy of TOP

Another list comes and goes and I'm not on it.

RDRAM is dead, dead, dead.

-Z



To: Estephen who wrote (80624)1/22/2002 1:21:28 PM
From: Don Green  Respond to of 93625
 
Asia DRAM Report: Rally Fading; Mkt May Take A Breather

Jan 21, 2002

By Dermot Doherty

Of DOW JONES NEWSWIRES

TAIPEI -- A recent rally in the spot market for dynamic random access memory chips appears to be losing steam after prices rose almost fourfold since November.

The softer prices came as brokers offloaded speculative inventory into the spot market last week, and reflects views among some participants that while fundamentals are improving, the market is poised to take a breather after the recent run-up, industry experts say.

On Monday, the spot price of a 128-megabit DRAM chip was fetching an average US$3.20, down from US$3.80 a week ago, but still well above lows of around US$1.00 in November, brokers said.

"Compared to last year, module makers and brokers have been holding abnormally high levels of inventory of one to three weeks, so they dumped some of that last week," said Rick Hsu, semiconductor analyst at Nomura Securities in Taipei. "It's too risky for them to have that level and prices had already gone up too much, creating a natural incentive to take profits."

Hsu said signs last week that talks between Micron Technology Inc. (MU) of the U.S. and heavily indebted South Korean chipmaker Hynix Semiconductor Inc. (Q.HYY) were faltering may also have added to the pressure on spot prices.

The two chipmakers have been in discussions for some sort of strategic alliance or tie-up, and part of the recent inventory buildup had stemmed from expectations that supply could shrink - and prices head even higher - in the event of a deal.

The vice president of Korean Exchange Bank, a lead Hynix creditor, said last week that creditors were opposed to further debt write-offs of Hynix's debt. Those comments followed news reports that Micron had asked Hynix's creditors to write off debt totaling as much as US$3.8 billion.

During the last industry downturn, when Micron acquired outdated wafer fabrication plants belonging to Texas Instruments Inc. (TXN), it took a year to shut down the fabs and upgrade them, Hsu said. The resulting supply cut was one of the reasons for the 1999-2000 upturn in DRAM pricing, he noted.

"If Micron does that again with Hynix's legacy fabs, 7% of global capacity would disappear, and that was one reason triggering the recent price hike," Hsu said.

Further Sharp Gains In Near Term Not Necessarily Good
Still, a slight correction in prices may not be all bad for the recovering sector if it is to avoid slipping back into a severe supply glut that bedeviled the market for much of last year.

The recent price rises "are a double-edged sword," said one analyst in Korea. "Foundries and Japanese players withdrew from DRAM because they were losing so much money on it, but because prices have risen above US$3.00 for both contract and spot, you could have the foundries coming back."

Others, though, argue that while running DRAM on idle production lines may improve capacity utilization at chip foundries, prices are still at loss-making levels and DRAM chip manufacturing is still far from attractive. For many chipmakers, it costs around US$3.50 to manufacture a chip.

Moreover, foundries would likely want to reserve their more advanced production lines - vital to making DRAM chips efficiently - for higher-margin non-memory products.

A greater danger would appear to be that cost-sensitive PC original equipment manufacturers might cut down on memory content per box. Megabit shipments soared last year as computer makers took advantage of record-low DRAM prices to boost the memory content of their machines. If chip prices continue to climb, PC makers may come under pressure to pare the amount of memory or raise PC prices. Neither would be particularly appealing, while room to maneuver could also be limited by the higher memory needs of Microsoft Corp.'s (MSFT) new Windows XP operating system.

Many industry experts say that, while much will hinge on the outcome of the Micron-Hynix talks, further big gains in spot prices are unlikely in the short term.

Opinions vary, however, on the details. Some players say a premium in Double Data Rate (DDR) pricing over synchronous DRAM chips could ensure the latter doesn't fall much or may even fuel further, more modest price gains. Others believe a period of consolidation, or perhaps further softening, is likely in store.

"We're going into the slack season, but more than that is the fact that prices have quadrupled since November and that's just too quick," said an official at one Taiwan DRAM maker, adding that "it's also not necessarily a good thing...it's better to have incremental hikes."

Still, DRAM makers seem intent on staving off a major correction in prices. When brokers started offloading their inventory last week, chipmakers themselves reverted to the recent tactic of withholding supply from the spot market.

"It's hard for vendors to push prices any higher right now, but they also don't want to sell and add to pressure on spot prices so that they can negotiate better contract prices with the PC OEMs," the executive at the chipmaker said. Contract prices are currently around, or just above, the US$3.00 level.

Nomura's Hsu said prices could soften in the first half but then stabilize in the third quarter. Average spot and contract pricing could hover around US$2.50 by the end of the second quarter, he added.

Pricing could hinge on how much supply is affected by the transition to DDR production, as well as the migration to advanced manufacturing technology that produces circuitry with narrow line-widths.

"It depends on how fast chipmakers can cross over to DDR with the next generation of geometry," he said. "If it's not smooth, pricing in the first half could be better than forecast."

Table Of Recent DRAM Spot Prices
=========================================================
21 Jan 14 Jan 7 Jan 31 Dec 24 Dec
64Mb SDRAM - $1.52 $1.52 $1.32 $0.96 $0.87
128Mb SDRAM - $3.20 $3.80 $3.00 $2.52 $1.93
256Mb SDRAM - $7.30 $7.00 $5.30 $4.74 $3.62
128Mb DDR - $3.80 $3.98 $3.55 $3.52 $3.35
128MB Rambus. - $40.20 $40.30 $36.00 $35.80 $36.20
*module price
Sources - brokers, module makers, DRAMExchange



To: Estephen who wrote (80624)1/22/2002 1:24:28 PM
From: Don Green  Respond to of 93625
 
Kingston Ships 32MB - 256MB SO-RIMM Modules To Communications/Networking Equipment Manufacturers -- Kingston SO-RIMMs Co-Developed and Validated by Rambus Inc

Story Filed: Tuesday, January 22, 2002 8:04 AM EST

FOUNTAIN VALLEY, Calif., Jan 22, 2002 /PRNewswire via COMTEX/ -- Kingston(R) Technology Company, Inc. today announced the immediate availability of a new line of SO-RIMM modules for the networking and communications industry utilizing 288- and 256-Megabit 800MHz high-density RDRAMs. Co-developed with Rambus Inc.(TM) (Nasdaq: RMBS), Kingston's new SO-RIMM modules successfully passed validation testing in mid-December 2001.

(Photo: newscom.com )

Kingston's engineers worked closely with Rambus to design the smaller form-factor SO-RIMM modules. All the SO-RIMM modules completed thorough RIMM(R) module validation testing. Rambus has approved the new designs as Revision 1.0 for 288- and 256-Megabit RDRAM based SO-RIMM modules.

"Kingston's latest line of SO-RIMM modules will provide the networking and communications product manufacturers with high-speed and high-capacity memory modules that will allow them to meet the Quality of Service (QoS) requirements for leading-edge equipment," said Mark Cheng, senior manager of engineering, Kingston.

"Memory bandwidth and capacity are critical for packet buffers on network line-cards," said Michael Sobelman, Business Development Manager for RDRAM networking, Rambus Inc. "Kingston's SO-RIMM modules deliver high-performance as well as high-capacity for networking and consumer applications," added Sobelman.

"Being first-to-market with leading-edge memory modules further demonstrates Kingston's strategy to provide the latest memory solutions for OEM and industrial customers," said Lorri Schroeder, manager, strategic OEM (SOEM) sales, Kingston.

Kingston part numbers and specifications:

ECC SO-RIMM

-- RBU800X18-8SO/256 256MB ECC 800MHz SO-RIMM
-- RBU800X18-4SO/128 128MB ECC 800MHz SO-RIMM
-- RBU800X18-2SO/64 64MB ECC 800MHz SO-RIMM
-- RBU800X18-1SO/32 32MB ECC 800MHz SO-RIMM

Non-ECC SO-RIMM

-- RBU800X16-8SO/256 256MB non-ECC 800MHz SO-RIMM
-- RBU800X16-4SO/128 128MB non-ECC 800MHz SO-RIMM
-- RBU800X16-2SO/64 64MB non-ECC 800MHz SO-RIMM
-- RBU800X16-1SO/32 32MB non-ECC 800MHz SO-RIMM



To: Estephen who wrote (80624)1/23/2002 3:16:33 PM
From: Don Green  Respond to of 93625
 
Rambus to demo 1.2-GHz RDRAM memory in PC at conference
Semiconductor Business News
(01/23/02 12:32 p.m. EST)

LOS ALTOS, Calif.--Rambus Inc. today plans to demonstrate the first PC running 1.2-GHz RDRAM memory at the Platform Conference in San Jose.

The company said an "overclocked" PC with Rambus DRAM will have peak bandwidth of 4.8 gigabits per second while running popular benchmarks to show performance and reliability. The Los Altos-based memory technology supplier said its RDRAM roadmap now includes speed grades for 1,066-MHz and 1,200-MHz memories, without changes in chip design or manufacturing industry infrastructure.

In fact, Rambus said the 1,200-MHz (1.2-GHz) memories used in today's demonstration were made in a high-volume wafer fab that's now producing 800-MHz RDRAM products. The chip maker and process technology were not initially identified by Rambus.

More information on PC demo and Rambus roadmap will be posted later today by SBN from the Platform Conference in San Jose.

siliconstrategies.com



To: Estephen who wrote (80624)1/23/2002 3:18:17 PM
From: Don Green  Respond to of 93625
 
Samsung RDRAM Breaks Speed and Price Barriers

Story Filed: Wednesday, January 23, 2002 2:07 PM EST

SAN JOSE, Calif., Jan 23, 2002 (BUSINESS WIRE) -- -- Samsung sampling 1066 MHz and 1200 MHz RDRAM(R) devices and RIMM(TM) modules

-- Samsung RDRAM now priced on par with competing memory technologies

-- Samsung RDRAM is the most stable high-speed memory currently available

-- Samsung total RDRAM revenues to date exceed $2 billion
-- Samsung projects continued strong RDRAM sales though 2002
Samsung Semiconductor, Inc., the world's largest semiconductor memory manufacturer, today announced that Samsung's next-generation RDRAM devices are here now. The company is yielding significant quantities of 1066 MHz RDRAM from their current 800 MHz production lines. Further selection is providing significant quantities of 1200 MHz RDRAM that are being sampled to Rambus and Samsung customers for use in their high-speed, system development projects.

"We've had a lot of success running selected Samsung production RIMM modules in systems at speeds up to 1200MHz," said Dr. Steven Woo, principal engineer and manager of the Performance Analysis Lab at Rambus Inc. "In our lab we have clearly demonstrated that today's CPUs can take real advantage of the higher memory bandwidth that RDRAM delivers today."

Sales of Samsung RDRAM high-speed memory devices have remained continuously strong since the product's inception in 1999. Current RDRAM pricing is now on par with other memory technologies and total RDRAM sales for the company to date exceed US $2 billion.

Samsung remains committed to RDRAM as a leading, long-term technology and plans to maintain its leading market share by offering the industry's most complete portfolio of cutting-edge RDRAM devices. Samsung's RDRAM evolutionary roadmap is clearly marked from today's 3.4 GB/s all the way up to 9.6 GB/s, giving performance computing platforms the bandwidth essential to handle their demanding applications.

"Now Samsung customers can obtain the performance and stability of an RDRAM system at a price on par with other memory technologies," said Tom Quinn, Samsung Semiconductor, Inc.'s vice president of Marketing. "There's no real reason why RDRAM should not be the memory technology of choice for the high-end computing platforms."

About Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc. is a wholly-owned US subsidiary of Samsung Electronics Co., Ltd. Headquartered in Seoul, Korea, Samsung Electronics is a mainstay of the global electronics industry. It is the world's leader in DRAM memory, SRAM memory, and TFT-LCD display products for industrial, mobile and desktop computing applications. Samsung Electronics is one of the world's largest semiconductor companies overall with a full line of semiconductor products including Flash memory, microprocessor and custom ASIC components. Samsung Semiconductor, Inc. is located in San Jose, Calif. For more information, please visit our website: samsungusa.com.



To: Estephen who wrote (80624)1/24/2002 6:37:51 PM
From: Don Green  Respond to of 93625
 
Rambus officials insist future bright despite threats from rival DDR camp
By Mark LaPedus, Semiconductor Business News
Jan 24, 2002 (11:42 AM)
URL: siliconstrategies.com

SAN JOSE -- During the Platform Conference here, executives from Rambus Inc. insisted that the company's future remains bright despite the current IC downturn and Intel Corp.'s decision to back a pair of rival memory schemes.

Until recently, Intel's Pentium 4 microprocessor line only supported Rambus' RDRAM memory architecture--which was supposed to provide a major boost for the Mountain View, Calif.-based chip company and its bottom line.

But in a possible setback to Rambus, Intel recently rolled out chip sets that support the rival SDRAM technology, and most recently, double-data-rate (DDR) SDRAM.

Analysts believe the jury is still out on Intel's efforts to push SDRAM and DDR SDRAM for the Pentium 4 processor. But in any case, Rambus' bottom line has suffered, due in part to the overall downturn in the IC market, according to analysts.

Earlier this month, Rambus reported sales of $24.8 million for its first fiscal quarter ended Dec. 31, a 28% decline over the same period last year and down 11% from the previous quarter. Net income for the quarter was $6.2 million, or $0.06 a share, compared to $13.0 million, or $0.12 a share, a year ago.

But still, executives from Rambus believe that the death of the Mountain View-based memory company is greatly exaggerated. Rambus has "10% of the memory market and is growing," declared Frank Fox, vice president and general manager of the RDRAM Standards Division at Rambus, in an interview at the Platform Conference on Wednesday.

Fox indicated that the company is experiencing brisk demand for RDRAMs in the PC, consumer, and networking sectors. The company's RDRAMs are used in the popular Playstation II game machines from Sony Corp. "There's also a renewed interested in high-performance PCs," he said. "That, of course, is good for RDRAMs," he said.

For months, Rambus' executives have insisted that the company's RDRAM technology provides superior performance over rival memory architectures, especially DDR SDRAM. "DDR is a difficult technology," Fox said. "We believe we have a 10% performance advantage over DDR," he said.

The company believes it is far ahead of DDR. Rambus, in fact, demonstrated the first PC running 1.2-GHz RDRAM memory at the Platform Conference in San Jose.

The company said an "overclocked" PC with Rambus DRAM will have peak bandwidth of 9.6-gigabits per second while running popular benchmarks to show performance and reliability. The Los Altos-based memory technology supplier said its RDRAM roadmap now includes speed grades for 1,066-MHz and 1,200-MHz memories, without changes in chip design or manufacturing industry infrastructure.

In fact, Rambus said the 1,200-MHz (1.2-GHz) memories used in today's demonstration were made in a high-volume wafer fab that's now producing 800-MHz RDRAM products. The chip maker and process technology were not initially identified by Rambus. However, Samsung Semiconductor Inc. today said its next-generation RDRAM devices were yielding significant quantities of 1,200-MHz memories in addition to significant volumes of 1,066-MHz chips. Samples of the 1.2-GHz parts are being supplied to Rambus.

Fox said the 1200-MHz RDRAMs will provide a superior solution over DDR. The new RDRAMs will "allow us to quadruple the module bandwidth," he said. "This will keep us way ahead of DDR," he said.

At present, Rambus is shipping 800-MHz RDRAMs. The company is sampling the 1066-MHz RDRAMs right now, with the new 1200-MHz parts due out in 2003, Fox said.



To: Estephen who wrote (80624)1/24/2002 6:41:38 PM
From: Don Green  Respond to of 93625
 
Rambus affirms modest share of DRAM market
By Jack Robertson, EBN
Jan 24, 2002 (11:47 AM)
URL: ebnews.com

Rambus Inc. in briefings this week showed projections of a 12% Direct RDRAM share of the total DRAM market by 2005 -- a far cry from the 50-to-75% share that supporters had forecast in recent years.

In presentations to the Platform Conference in San Jose, Calif. and elsewhere, Rambus affirmed forecasts by IDC that also showed rival DDR memory taking nearly 80% total DRAM market share in the same time period.

Frank Fox, vice president and general manager of the RDRAM Solutions Division, said Rambus was pleased with the projections that showed Direct Rambus growing over the three years and capturing a larger share of the high performance desktop and workstation market.

The Rambus-sanctioned forecast, however, was at wide variance with previous projections by Mark Edelstone, analyst with Morgan Stanley Dean Witter, who several years ago was claiming RDRAM would take over 75% of the PC market by 2003. Samsung Electronics last year predicted that more than 600 million RDRAM chips would be shipped this year.

Fox said, however, that Rambus Inc. never makes any forecasts of future RDRAM market share, leaving that to other parties. He said the firm was delighted to see the growing penetration of RDRAMs into the high performance space, where it was proving much more cost effective than rival memory technologies.

He cited seven standard benchmark tests, from BizWinstone 2001 to several different ViewPerf tests, that showed 128-Megabit RDRAM achieved up to 40% greater performance than 128-Mbit DDR.



To: Estephen who wrote (80624)1/25/2002 4:39:47 PM
From: Don Green  Respond to of 93625
 
Intel Expected to Cut Pentium 4 Prices Over Weekend
SAN FRANCISCO (Reuters)Friday January 25 3:51 PM ET -

Intel Corp. (Nasdaq:INTC - news) is expected to cut prices on its highest-performance Pentium 4 processors and other chips over the weekend as the world's largest chipmaker passes on cost savings from new manufacturing technologies, analysts said.

``We would expect that they're going to reduce prices,'' said Joe Osha of Merrill Lynch. ``Intel's going to try and price things to make sure they're moving people to Northwood.''

Northwood is the code name for Santa Clara, California-based Intel's newest Pentium 4 chip, in which some of the dimensions are as small as 0.13 microns. By comparison, a human hair is about 50 microns wide.

By moving to smaller line widths, Intel is able to put 55 million transistors on a single chip, and it has said it gets about twice as many chips per wafer on the 0.13 micron manufacturing process than with the 0.18 micron process.

The fastest Pentium 4 chip now runs at 2.2 billion cycles per second, or 2.2 gigahertz, costing $562 in lots of 1,000. When Intel introduced that chip on Jan. 7, it dropped the price of its 2.0 gigahertz Pentium 4 made with 0.18 micron technology to $342.

``If the 2.2 gigahertz Pentium 4 is above $500 on Monday I'll be very surprised,'' said Nathan Brookwood, president of market research firm Insight 64. He estimated that Intel will drop the price of that processor to the high $400 range, implying a decrease of about 15 percent.

An Intel spokesman declined to comment on the price cuts.

``This is a very normal, seasonal kind of thing,'' Brookwood said, adding the prices will also come down on Intel's 2A Pentium 4 processors, the 2.0 gigahertz Pentium 4, the 1.9 gigahertz Pentium 4 and the 1.8 gigahertz Pentium 4.

Those processors are now priced at $364, $342, $273 and $225, respectively, according to Intel's price list published on its Web site.

Intel typically introduces new processors at the beginning of January, then drops prices on them later in the month. Another round will come in April, when Intel introduces even faster Pentium 4 processors.

``In April we'll see some new, faster Pentium 4s, and they'll show up at this $500 to $600 price range,'' Brookwood said.



To: Estephen who wrote (80624)1/25/2002 10:08:45 PM
From: Don Green  Respond to of 93625
 
DDR gobbles up memory market

Quarter of sales in January
By Mike Magee, 25/01/2002 09:34:39 BST

TEAM DDR must be ecstatic after market figures on a Website demonstrate that double data rate (DDR) memory, a flavour of SDRAM, captured more than one quarter of sales during the month of January.
At the beginning of the week we reported that Kingston had given its stamp of approval to the memory technology, but supplies were a little constrained.

Yet a chart at memory tracking site DRAM Exchange shows that DDR has around a quarter of sales during early 2002.

Intel set its seal of approval on DDR first thing this year when it announced the i845D, a chip set it makes which supports the memory type.

Meanwhile, Rambus, which had been very bullish about the share it might have of memory seems to have accepted that it will not now be able to milk the RDRAM cash cow in the PC market, according to EB News (here).

Rambus still claims RDRAM is a better memory technology than others.

Yet its presentation at the Platform Conference of its 1200MHz memory was poorly attended, according to a reliable mole who snuck in. Only around 14 people listened to the presentation and one of the audience harangued the speaker so much that our mole feared Tyson-style fisticuffs might break out. µ

213.219.40.69



To: Estephen who wrote (80624)1/25/2002 10:21:59 PM
From: Don Green  Respond to of 93625
 
Samsung enters DDR333 market with chips for PCs and other products
By Semiconductor Business News
Jan 25, 2002 (11:00 AM)
URL: siliconstrategies.com

SAN JOSE -- During the Platform Conference here this week, Samsung Semiconductor Inc. announced it has begun sampling its initial DRAMs, based on the 333- and 400-MHz versions of double-data-rate (DDR) SDRAM technology.

In compliance with the new JEDEC DDR-II specifications, Samsung said it has doubled the bandwidth of its DDR SDRAM devices to 400-megabits-per-second (400-Mbps) for main memory and to 700-megabits-per-second (700-Mbps) for graphics memory.

The new DDR SDRAM chips are designed for PC main memory, high-end graphics cards, networking products, and set-top boxes, said Mueez-Ud Deen, director of marketing for DRAM and graphics memory at Samsung Semiconductor, the U.S. chip arm for Korea's Samsung Electronics Co. Ltd.

"We're sampling our DDR333 chips now," Deen said in an interview at the Platform Conference. System manufacturers will begin ramping up the DDR333 devices "in August or September," he said.

The new product line expands Samsung's DDR SDRAM line. In 1997, Samsung entered the DDR SDRAM market by rolling out a 128-megabit chip. Today, Samsung's product portfolio includes 128-, 256-, and 512-Mbit DDR SDRAM devices.



To: Estephen who wrote (80624)1/25/2002 10:39:13 PM
From: Don Green  Respond to of 93625
 
Move to faster, more profitable DRAMs goes painfully slow for suppliers
By Mark LaPedus, Semiconductor Business News
Jan 25, 2002 (3:42 PM)
URL: siliconstrategies.com

SAN JOSE -- It could be another long and miserable year in the poor DRAM industry, based on the consensus and general mood at the Platform Conference here this week.

While executives from the DRAM industry reported that product demand is finally picking up after a long slump in 2001 and the last part of 2000, they were also crying the blues over what could be a slow and painful transition to the new, high-margin memory architectures in 2002.

The slower-than-expected transition to new DRAM technologies could force shell-shocked memory makers to sell lower-priced commodity products much longer than they would prefer, thereby possibly prolonging their financial woes and losses, warned analysts.

Going into 2002, memory vendors hope to line their pockets by pushing several high-margin technologies, such as next-generation RDRAMs, DDR333 and DDR400 SDRAMs, DDR-II, Fast Cycle RAM (FCRAM), Reduced Latency DRAM (RLDRAM), and others.

Most these technologies are lined up on the runway and ready to take off. But much to the chagrin of the memory, chip set and even processor makers, major system houses are just rolling out new products based on the current DRAM technologies, and they don't seem to be in any hurry to adopt the new memory architectures, according to sources.

This is especially true in the troubled PC market. At present, many PC makers are finally making a transition from plain-vanilla synchronous DRAMs to 200- (DDR200) and 266-MHz (DDR266) versions of double-data rate SDRAMs. At the high-end, PC makers are now ramping up systems with Rambus Inc.'s RDRAM technology, it was noted.

It appears that the DDR SDRAM market is finally taking off, thanks in part to Intel Corp.'s recent move to launch a chip set based on this technology.

Now, DRAM makers want system houses to adopt the faster and more-profitable DDR333 SDRAM technology, but the major PC makers are reportedly balking. "We would love to sell [the PC makers] DDR333 right now, but the OEMs are not dying to adopt the technology," said Mueez-Ud Deen, director of marketing for DRAM and graphics memory at Samsung Semiconductor Inc. of San Jose.

"There is a hesitancy [among the system houses] to adopt new technology, because the market has been so soft," Deen said. "They are just barely getting their act together with DDR266," he told SBN at the Platform Conference.

But still, vendors are racing each other to develop DDR333 products in order to beat their competitors to the punch. For example, Taiwan's Nanya Technology Corp. is reportedly the first DRAM maker to bring up its DDR333 chips into production. Another Taiwanese vendor, Silicon Integrated Systems Corp. (SiS), rolled out the first chip set that supports DDR333.

This week, South Korea's Samsung announced its first DRAMs that support DDR333, and the possible follow-on, DDR400 (see today's story). And next month, Taiwan's Via Technologies Inc. will launch a DDR333-enabled chip set, said Richard Brown, director of marketing for the Taipei-based company.

Samsung is sampling its DDR333/400 SDRAMs right now. System manufacturers are expected to ramp up their DDR333/400-enabled products "in August or September," Deen said.

Others believe that DDR333 will ramp up in 2002 as well. "We're sampling DDR333," said Mike Seibert, strategic marketing manager for Micron Technology Inc. in Boise, Idaho. "We plan to get DDR333 up and running this year," Seibert told SBN at the Platform Conference.

"There is also a lot of interest in DDR400, because of Intel," he said, noting that Intel's Pentium 4 processor utilizes a 400-MHz front-side bus.

Others had different opinions. DDR333 will not take off until 2003, while DDR400 has no chance for success in the market, declared Jim Sogas, vice president of sales for Elpida Memory (USA) Inc. in Santa Clara, Calif. Elpida is a joint DRAM venture between Japan's Hitachi Ltd. and NEC Corp.

Instead of DDR400, the market will directly shift from DDR333 to a next-generation DDR SDRAM technology called DDR-II, Sogas said. "We won't see DDR333 in any volumes until next year," he said. "We won't see DDR-II in volumes until 2005," he told SBN.

Still others believe the transition from DDR333 to DDR-II will occur much faster. DDR333 "is a speed bump," said Chee Ho, director of product marketing at Infineon Technologies Inc. in San Jose. "DDR-II, in my mind, will be out in '03. Volumes should hit in '04," he said during a panel discussion at the San Jose conference.

In any event, the DRAM market is still a lose-lose proposition. On one hand, DRAM makers can't seem to convince system houses to adopt new memory technologies fast enough. And then on the other hand, DRAM makers can't seem to recoup their massive R&D investments.

"The life cycle [for a DRAM architecture] is so short," Ho lamented. "We may never be able to get back our [R&D] investments," Ho said during the panel discussion.



To: Estephen who wrote (80624)1/28/2002 11:01:54 AM
From: Don Green  Respond to of 93625
 
Intel cuts prices by up to 18 percent


Joris Evers, IDG News Service\Amsterdam Bureau
January 28, 2002, 05:33

Intel Corp. cut prices on some of its Pentium 4 and Celeron desktop processors over the weekend, as well as on two Xeon server and workstation processors, and two Pentium III server processors.

The biggest cut was made on the 1.60GHz Pentium 4, with an 18 percent reduction from US$163 to $133. Other reduced-price Pentium 4 processors are the 1.90GHz, from $273 to $241, the 1.80GHz, from $225 to $193, and the 1.70GHz, from $193 to $163.

All prices are wholesale, when bought in 1,000-unit quantities. The price cuts are unlikely to have an immediate effect on street prices because of existing channel inventories.

While Intel did not touch the prices of its latest Pentium 4 models, those that run at or above 2GHz, it did cut the prices on its four top Celeron processors, targeted at budget-minded consumers. The 1.30GHz Celeron was reduced from $118 to $103, the 1.20GHz from $103 to $89, the 1.10GHz from $89 to $79, and the 1GHz from $74 to $69.

In the servers and workstations area Intel reduced prices on two Xeon processors by 13 percent and two of the Pentium III server processors by 16 percent.

The 2GHz Xeon with 256K bytes of cache now costs $396, down from $455, and the 1.70GHz Xeon with 256K bytes cache is listed at $224, down from $256. The Pentium III 1.26GHz is now priced at $202, previously $241, and the 1.13GHz version is now sold for $170, down from $202.



To: Estephen who wrote (80624)1/28/2002 2:20:21 PM
From: Don Green  Respond to of 93625
 
M'shita Electric Sues Samsung For Alleged Patent Infringement
Tuesday, January 29, 2002
TOKYO (Nikkei)--Matsushita Electric Industrial Co. (6752) last Friday filed, in a U.S. federal court in New Jersey, a patent infringement lawsuit against Samsung Electronics Co. of South Korea and three other Samsung group firms, sources close to Matsushita said Monday.

The suit involves three Matsushita patents on circuit technology that enable DRAMs to operate at high speeds.

The Japanese company seeks compensation for damages and a court order to halt U.S. sales and production of the four South Korean firms' products.

The other three Samsung firms are Samsung Electronics America Inc., Samsung Semiconductor Inc. and Samsung Austin Semiconductor, which are all based in the U.S.

Matsushita claims that the power source/drive circuits used in Samsung's DRAMs infringe on its patents. It has asked the Samsung firms to enter into license contracts with it since December 1999. But the two sides failed to reach an accord, prompting Matsushita to sue Samsung.

The Japanese company pulled out of DRAM production in 1998 to focus on system chips. Matsushita originally developed the technology in question for DRAMs, but it can also be applied to systems chips. In this light, the lawsuit against Samsung is also aimed at scaring off possible future patent infringements of its systems chips technology, the sources noted.

Demand for systems chips used in digital television sets and mobile phones is expanding, and according to one estimate, the market is expected to grow to 65 billion dollars in 2005.

(The Nihon Keizai Shimbun Tuesday morning edition)



To: Estephen who wrote (80624)1/28/2002 6:23:24 PM
From: Don Green  Respond to of 93625
 
Micron and Hynix break off acquisition talks
By Jack Robertson, EBN
Jan 28, 2002 (8:59 AM)
URL: siliconstrategies.com

Micron Technology on Monday confirmed that talks to take over seven Hynix Semiconductor Inc. memory fabs have broken off and no further discussions between the two firms are scheduled.

A Micron spokesman declined to elaborate, but some industry sources said the two sides couldn't narrow their differences over the price for the seven fabs. Micron reportedly had offered $2.5-to-$3 billion, but some of the largest Koreancreditors of Hynix wanted several billion more.

The two sides were negotiating last week in California but were unable to reach any agreement. The Micron spokesman said at this time there are no plans to resume any talks at this time.

It wasn't clear if the negotiations were irrevocably dead, or if this part of a Korean "brinkmanship" negotiating pattern. The Micron spokesman declined to go beyond the statement that no further talks are scheduled " at this time," but some sources speculated that this left the door open for the Koreans to return to the table if they were willing to accept terms much closer to Micron's original offer.



To: Estephen who wrote (80624)1/28/2002 6:25:52 PM
From: Don Green  Respond to of 93625
 
Matsushita claims Samsung infringes patents
By Semiconductor Business News
Jan 28, 2002 (11:02 AM)
URL: semibiznews.com

SECAUCUS, N.J. -- Japan's Matsushita Electric Industrial Co. Ltd. here today announced it has filed a patent infringement suit against Korea's Samsung Electronics Co. Ltd. and three of its U.S. affiliates over DRAM technology.

The suit, filed in the U.S. District Court of New Jersey, claims that Samsung has infringed upon three of Matsushita's DRAM patents. The suit involves the following parties: Samsung Electronics Co. Ltd., Kyonggi, Korea; Samsung Electronics America Inc., Ridgefield Park, N.J.; Samsung Semiconductor Inc., San Jose, Calif.; and Samsung Austin Semiconductor L.L.C., Austin, Tex.

In the suit, Matsushita is seeking damages "in excess of $100 million for each patent" infringed by Samsung, according to a spokesman for the U.S. subsidiary of Matsushita. The Japanese company is also seeking an injunction against Samsung for selling DRAMs, based on the infringed patents, the company said.

The filing came after a two-year negotiation between Matsushita and Samsung failed to reach an agreement, according to the company. Matsushita makes DRAMs for its own, internal products; it does not sell these memories in the merchant market.

Matsushita did not elaborate on the details of the suit, but noted the action involves three U.S. patents: '5375 095, '5053 998, and '5475 648.



To: Estephen who wrote (80624)1/29/2002 12:38:17 PM
From: Don Green  Read Replies (1) | Respond to of 93625
 
Rambus RaSer Cell Sets New Benchmark in Integrated Serial Link Technology; RaSer Cells Now Available in 0.13-micron CMOS Process

Story Filed: Tuesday, January 29, 2002 9:00 AM EST

LOS ALTOS, Calif., Jan 29, 2002 (BUSINESS WIRE) -- Rambus Inc., the leading provider of high bandwidth chip connection technology, today announced the availability of an extremely low power RaSer serial link cell in 0.13-micron process. The introduction sets new standards for operating range, low power and small size. Rambus will demonstrate this newest generation of RaSer(TM) serial link technology at DesignCon in Santa Clara, California.

Rambus has developed its second-generation family of cells based on serializer/deserializer ("SerDes") technology. The latest RaSer cells operate from 1 to 4 gigabits per second (Gbps), while consuming less than 100 mWatts of power at 2.5 Gbps and uses less than 0.5 mm squared of area in a 0.13-micron CMOS process.

"The small size and low power make the latest RaSer cells ideal for applications that integrate multiple links on one chip," said Kevin Donnelly, vice president of the Network Connections Division at Rambus Inc. "The RaSer cells are available in single-, dual- and quad-link configurations. For example, a 32-link serial link switch could be implemented in less than 6 mm by 6 mm and consume less than 5 watts."

Rambus will demonstrate the 0.13-micron 3.2Gbps RaSer quad serial link technology for the first time at DesignCon, January 29-30. As network equipment moves to support higher line rates and higher aggregate switch bandwidth, developers are integrating SerDes functions into line card and backplane traffic manager devices. Speed, reliability and low power are key to enabling these next generation line cards and switch fabrics. Rambus will demonstrate the low jitter, low bit error rates, and extremely low power of the new RaSer 0.13-micron 3.2Gbps quad SerDes cell.

RaSer(TM) Cell Technology
RaSer technology from Rambus offers designers a scalable serial link architecture that addresses current and future serial link applications requiring the highest bandwidth. RaSer technology can be employed across a variety of different networking applications, including WAN router and switch backplanes, Gigabit and 10-Gigabit Ethernet, InfiniBand(TM), Fibre Channel, and fiber optic network interfaces and any other custom chip-to-chip applications.

Rambus RaSer cells are offered as an analog core library cell, for ASIC and ASSP designs. A complete serial link solution, the RaSer cell contains serializer, transmitter, receiver, deserializer, and clock recovery circuitry. The cell is designed to meet the physical layer requirements for a wide range of serial link applications, each of which may have different logical requirements (protocol, framing, coding, etc.). As a replacement to stand-alone discrete serial link components, the RaSer cell may be integrated with other communications functions in order to offer higher value network services and reduced component count.



To: Estephen who wrote (80624)1/29/2002 12:39:39 PM
From: Don Green  Respond to of 93625
 
Rambus to Present Technical Papers and Demo RaSer Technology at DesignCon 2002

Story Filed: Tuesday, January 29, 2002 9:01 AM EST

LOS ALTOS, Calif., Jan 29, 2002 (BUSINESS WIRE) -- Rambus Inc., the leading provider of high-bandwidth chip connection technology, will present two technical papers at this year's DesignCon in Santa Clara, California, January 28-30. The first paper describes methods for modeling Rambus' next generation 3.2GHz Yellowstone memory signaling technology. The second paper outlines a novel technique for high-speed model optimization. In addition, Rambus will for the first time demonstrate its 0.13-micron 3.2 Gigabits per second (Gbps) RaSer Quad serial link technology in the Platinum Sponsor Booth No. 503.

Interconnect Design and Modeling of a 3.2 Gbps/pair Bi-directional Differential Memory System

Session HP-10

Tuesday, January 29, 2:00pm - 2:50pm

Rambus' Yellowstone memory signaling technology implements low-swing differential signaling to achieve data rates of 3.2GHz and beyond. A low-swing differential interconnect system at a multiple-gigabit data rate using low-cost and conventional packaging and PCB technologies poses many signal-integrity challenges. High-frequency effects such as conductor/dielectric losses, trace/via coupling, impedance mismatches, and process variations must be understood to optimize voltage and timing margins of the overall system. Robust modeling and simulation methods are developed by testing several prototypes. These are measured in time and frequency domains to generate HSPICE models. 3D full-wave analyses of wirebond BGA packages are used to optimize the designs. Measured and simulated S-parameters are directly incorporated into ADS to improve simulation accuracy. Finally, arbitrary bit patterns are used to correlate the simulation results with measurements.

A Generalized Optimization Technique for Model Extraction from both TDR and VNA Measurements Extracting and Building Signal-Integrity Models

Session HP-22

Wednesday, January 30, 3:00pm - 3:50pm

This presentation discusses a general approach to extract accurate interconnect models over a wide bandwidth from time-domain-reflectometer or vector-network-analyzer measurements. It is based on an efficient optimizer that interactively calls any given circuit simulator. The models are customized to take advantage of each simulator's built-in modeling capability. For example, HSPICE's W-element-coupled transmission line models, with skin effect and dielectric loss, are extracted from such individual components as package, connector, and PCB traces. The time-domain waveform of a complex memory channel can now be easily correlated. Architectural flow and global and local iterations, piecewise-linear source models, weighting functions, and time-windowing are discussed.

First Industry Demonstration of the 0.13-micron 3.2Gbps RaSer(TM) Quad Serial Link Technology

Rambus Booth No. 503

As network equipment moves to support higher line rates and aggregate switch bandwidth, developers are integrating serializer -- deserializer ("SerDes") functions into line card and backplane traffic manager devices. Speed, reliability and power are key to enabling these next generation line cards and switch fabrics. Rambus will demonstrate the low jitter, low bit error rates, and extremely low power of the new RaSer 0.13-micron 3.2Gbps quad SerDes cell.



To: Estephen who wrote (80624)1/30/2002 6:27:46 PM
From: Don Green  Respond to of 93625
 
Infineon In Talks With Hynix Of S Korea On DRAM Tie-Up
Thursday, January 31, 2002
TOKYO (Nikkei)--Major German microchip producer Infineon Technologies AG is now in talks with Hynix Semiconductor of South Korea on a possible alliance in the area of DRAM operations, Infineon CEO Ulrich Schumacher revealed in an interview with The Nihon Keizai Shimbun Wednesday.

Now visiting Japan, the executive said that the two firms are considering tying up in production of several DRAM models. Any alliance between the two would be geared toward cooperation in the areas of development and manufacturing, and might take the form of a joint venture, suggested Schumacher. The CEO stressed that his company did not plan to emulate Micron Technology Inc. of the U.S., which buys out rival firms and shuts down plants that are no longer required.

Infineon is the world's fourth-largest manufacturer of DRAMs, posting sales of 5.67 billion euros for the year ended September 2001, down 22% on the year, marking a net loss of 591 million euros.

Infineon had hoped to form an alliance with Toshiba Corp. (6502) in DRAM operations but talks on a possible partnership failed in December, forcing the German firm to seek another partner. Toshiba decided to withdraw from the DRAM business shortly after the talks came to an end.

DRAM prices on the global market have shown signs of bottoming out since the beginning of the year, in part due to production cuts by major chipmakers. There is still an overabundance of DRAM makers, however, leading many to expect further realignment in the industry, perhaps involving Infineon.

(The Nihon Keizai Shimbun Thursday morning edition)



To: Estephen who wrote (80624)1/30/2002 9:25:56 PM
From: Don Green  Respond to of 93625
 
Hynix Halts DRAM Sales on a Spot Basis

Online staff -- Electronic News, 1/30/2002

San Jose-based Hynix Semiconductor America Inc. late Tuesday said it is halting spot allocation sales of all its DRAM chips, citing recent increases in demand and supply shortfalls. For the remainder of the quarter, the company said it plans to sell its DRAM chips to only its strategic and contractual customers.

The company did not disclose what proportion of its double data rate (DDR) and single data rate DRAMs are sold on a spot allocation basis. The company said memory demand has been fueled by a number of factors, including the introduction of Intel Corp.’s Brookdale chipset, which allows the Pentium 4 processor to interface with DDR DRAM. Falling PC prices, the introduction of Windows XP and increased sales of consumer electronics have also contributed, the company said.

"The memory market is cyclical in nature-experiencing oversupply and shortages," said Farhad Tabrizi, Hynix’s VP of worldwide memory marketing, in a statement. "Customers can achieve a balance through strategic partnerships with their key DRAM suppliers, by forming long-term agreements and building solid supplier/customer relationships."

Suffering the worst year in the history of the semiconductor industry, chip suppliers reduced capacity last year by working through excess chip inventory.

Hynix Semiconductor America is the U.S. subsidiary of Hynix Semiconductor Inc. of Ichon, South Korea, the world’s third largest memory supplier. Hynix is heavily in debt and has recently been in talks with Micron Technology Inc. for a possible merger, although on Monday Micron said those discussions have ended. It is widely believed the two companies could not agree on an amicable price for the acquisition of Hynix’s seven fabs. A merger with Micron, the world’s second largest memory supplier, would place the combined companies ahead of world leader Samsung Electronics Co. Ltd.



To: Estephen who wrote (80624)1/30/2002 9:28:40 PM
From: Don Green  Read Replies (1) | Respond to of 93625
 
RMBS - RAMBUS INC (NasdNM)

Date Open High Low Last Change Volume % Change
01/30/02 7.51 7.52 7.05 7.39 -0.07 1290500 -0.94 %

Composite Indicator
TrendSpotter (TM) Sell

Short Term Indicators
7 Day Directional Indicator Sell
10 - 8 Moving Average Hilo Channel Sell
Price vs. 20 Day Moving Average Sell
20 - 50 Day MACD Oscillator Sell
20 Day Bollinger Bands Hold

Short Term Indicators Average: 80% - Sell

Medium Term Indicators
40 Day Commodity Channel Index Sell
Price vs. 50 Day Moving Average Sell
20 - 100 Day MACD Oscillator Sell
50 Parabolic Time/Price Sell

Medium Term Indicators Average: 100% - Sell

Long Term Indicators
60 Day Commodity Channel Index Sell
Price vs. 100 Day Moving Average Sell
50 - 100 Day MACD Oscillator Buy

Long Term Indicators Average: 33% - Sell

Overall Average: 80% - Sell

stockcharts.com[w,a]daolyimy[de][pb50!b200!d20,2!f][vc60][iub14!la12,26,9!lp14,3,3!lf!lc20!lg]



To: Estephen who wrote (80624)1/30/2002 9:34:27 PM
From: Don Green  Read Replies (1) | Respond to of 93625
 
Rambus Price targets from StockPrice web site

Company Symbol Analyst Price Target Date Mentioned Time
Rambus RMBS Chase H&Q $77 12/12/00
Rambus RMBS Chase H&Q $48 12/01/00
Rambus RMBS Mrgn Stnly Dn Wttr $200 11/03/00
Rambus RMBS Mrgn Stnly Dn Wttr $100 10/19/00
Rambus RMBS UBS Warburg $165 10/19/00
Rambus RMBS Mrgn Stnly Dn Wttr $200 08/14/00
Rambus RMBS UBS Warburg $165 07/19/00



To: Estephen who wrote (80624)1/31/2002 7:25:44 AM
From: Estephen  Read Replies (3) | Respond to of 93625
 
LIST OF BASHERs; Update - Public service courtesy of TOP
Basher now posting regularly.

Trade Journal Liars - jack anderson* ebn news ( lies about everything), and sherry hoe garber - semico (provides fake semi statics), Bert mccomes, drew peck (provides phony market analysis), eetimes, chaners electronic news, ...

Inquire Rag - paid by micron advertising to print false and misleading stories about Rambus.

Bilow - (more widely known as B*low j*b) paid basher, proven liar, teller of 10,000 lies, kicked off SI for fraudulent posting

scrumbia - paid lair

dan3 - copycat (lost his a@s shorting last years run)

cordob - copy cat looking for recognition, runs amature web site which is spammed out on message boards..

Jdaasoc - Liar, weak minded

Don Green - copy cat, frequently posts fake news articles, likes to swap w/ b*low j*b.

Eric K - copy cat

win smith - copy cat

pheilman - copy cat

scared but hopeful - copy cat, frequent lier

ali chen - copy cat

bill jackson - copycat

gene parrot - copy cat

gvtucker - copy cat

nightowl - copy cat

sun tzu - copy cat

Jim Mcmannis - basher, Proud liar.

skeeter bug - copy cat



To: Estephen who wrote (80624)3/22/2002 11:31:01 PM
From: Don Green  Respond to of 93625
 
PlayStation 3: The next generation
By David Becker
Staff Writer, CNET News.com
March 21, 2002, 3:35 PM PT
news.com.com

SAN JOSE, Calif.--If distributed computing can unravel the building blocks of life, it can probably help make a better version of "Crash Bandicoot."
That appears to be Sony's thinking as the electronics giant moves ahead with development of the next version of its PlayStation video game console.

Speaking at the Game Developers Conference (GDC), an annual trade show for the creative and technological sides of the game industry, Shin'ichi Okamoto, chief technical officer for Sony Computer Entertainment, said research efforts for the PlayStation 3 are focusing on distributed computing, a method for spreading computational tasks across myriad networked computers.

Distributed computing is making headway as a way for researchers to conduct demanding computing experiments, such as an ongoing project by Stanford University to unlock protein structures.

Okamoto said the method also appears to hold the most promise for dramatically boosting the performance of the next PlayStation. Game developers have said they would like the next console to have a thousand times the processing power of the PlayStation 2. There's no way to do that with hardware advances alone, he said.

"Moore's Law is too slow for us," Okamoto said, referring to the long-held truism that semiconductor power doubles roughly every 18 months. "We can't wait 20 years" to achieve a 1,000-fold increase in PlayStation performance, he said.

Okamoto said Sony is working with IBM to apply Big Blue's research in "grid computing," a variation of distributed computing, to the next PlayStation. While he didn't share details, the plan presumably would involve networked game machines sharing software, processing power and data.

Okamoto added that the recently released kit that allows PlayStation 2 users to run Linux software on the console is the foundation for much of the research.

Looking further ahead, Okamoto saw even bigger changes for Sony's game business. "Maybe the PlayStation 6 or 7 will be based on biotechnology," he said.

While Sony focused on the future, Microsoft looked at the recent past. Pete Isensee, lead developer for Microsoft's Xbox Advanced Technology Group, used his GDC talk to deliver a mostly positive critique of the Xbox's journey to the market, lauding a product launch that happened on time and without major bugs, a departure from Microsoft history.

"Microsoft has this stigma about not getting it right until version three," he said. "We didn't have a choice with Xbox. If we didn't get it right with version one, Sony and Nintendo would eat us alive."

Xbox glitches Isensee touched on mainly centered on international issues. The game console's bulky controller repelled Japanese consumers, for instance, forcing Xbox to design a slimmed-down version that comes standard with the Japanese Xbox and as an add-on purchase for U.S. and European users with small mitts.

"There is a perception we didn't know what we were doing when it came to the controller," Isensee said. "What we failed to do is a usability test for a global market. You need to do that, because things that work in the U.S. don't always work in Japan or Europe."

That includes the Xbox start-up screen, which had to be redesigned for the Xbox's European launch because nobody realized that the German "einstellungen" wouldn't fit in the same text space as "settings."



To: Estephen who wrote (80624)3/26/2002 12:20:01 PM
From: Don Green  Read Replies (2) | Respond to of 93625
 
Understanding Memory

April 9, 2002
By Stephen J. Bigelow

Random access memory (RAM) plays a critical role in your PC. It holds the operating system, the running applications, and the open data files for your applications. When you launch your favorite video editor, 3-D shooter, or other software, the program instructions and data load into RAM, and the CPU fetches those instructions and data from the RAM. Even your Windows desktop occupies a certain amount of RAM. A PC with more RAM will run more programs simultaneously, handle larger data files (such as those with complex graphic images), and generally exhibit better system performance. But how much memory do you need, and what type? We'll show you how to estimate your memory requirements, and we'll discuss the various types of RAM available today.

Adding It Up

Should you live with a minimum amount of RAM and save a few dollars, or should you spend some extra cash and load up the system? Just how much memory is enough? The answer really depends on what you're doing with the PC; RAM requirements can vary from system to system. Let's do the math.

Windows XP is rated to run with a minimum of 128MB, but it gets a real speed boost from 256MB. Windows 2000 puts its baseline at 64MB but will benefit from 128MB or more and as a server will see optimal performance with 512MB or more. Windows 98 and Me will run with 32MB, but you'll need at least 64MB for decent performance and 128MB or more to shine. Linux users will need at least 48MB to 64MB (depending on the version) but will certainly benefit from 128MB. For a Linux server, you could easily use 512MB or more.

Of course, the OS is useless without applications, so you'll also need enough memory to load all the programs you want to run at any one time. Applications like Microsoft Word or Excel generally use about 32MB each, but you can check the system requirements listed on each application's box to determine the recommended RAM. If you want to run three applications simultaneously (say, Word, Internet Explorer, and Media Player), you'll need to add the RAM requirements for all three to your total. Finally, you'll need RAM for data files—the open Word documents, Excel spreadsheets, MPEGs , and so on. More complex work demands more RAM. For example, a simple document may require less than 1MB, but a database file may fill several megabytes, and a high-resolution photo scan or graphic design may demand 50MB or more.

As a rule of thumb, if you base your overall memory requirements on the amount recommended for your operating system, you'll be in the ball park. As noted, you'll have to add more if you're processing large, complex files. Remember that Windows also uses virtual memory in the form of a swap file on your hard drive. If you don't want to buy the full amount of RAM that you expect to need, that's okay; your PC will make use of virtual memory to make up any difference. But be aware that this will result in a performance hit because of the hard drive access.

Time for More?

Click to enlarge

So how do you know when it's time for more RAM? Windows 9x makes checking the available memory easy using System Monitor (Figure 1). This is a versatile reporting tool that can keep you informed of many different conditions in your PC, including unused physical memory. Start the system normally, then load any applications and data you use regularly to simulate normal use. Click on Start | Programs | Accessories | System Tools | System Monitor. Once System Monitor starts, click the Add button, select the Memory Manager category, then select the Unused Physical Memory item and click on OK. Memory use will be tracked as a graph over time. If System Monitor reports less than 10 percent unused memory, it's time to consider an upgrade. For example, if you have 128MB on the PC and System Monitor reports less than 12MB of RAM when the system is being used in a normal fashion, think about a memory purchase.

To check memory usage in the Windows 2000 and Windows XP families, press Ctrl-Alt-Del, choose Task Manager, and click the Performance tab. Here you see the current memory usage, as well as a graph showing memory usage history. Click the Processes tab and you can see the memory usage for each process. The Select Columns item in the View menu lets you choose to track other types of information—basically the same sort of things shown in the Windows 9x System Monitor.

In general, with regard to memory, more is better. Before you upgrade, though, you'll want to understand the various types of memory.

Ram Basics

Today, there are three varieties of memory in common use: SDRAM (synchronous dynamic RAM), Direct RDRAM (Rambus dynamic RAM), and DDR (double data rate) SDRAM. All three serve exactly the same role in a computer, but their internal designs are different, and memory module layouts for SDRAM and RDRAM are incompatible.

SDRAM was first used in 1996 with support for a PC processor bus (also called front-side bus or FSB) speed of 66 MHz, but by 1998 it had advanced to support the 100-MHz FSB. SDRAM certified to run at 100 MHz was dubbed PC100 SDRAM, and it is available in 168-pin dual in-line memory modules (DIMMs). Since each DIMM offers a 64-bit data bus, the peak bandwidth for SDRAM is 800 MBps (8 bytes x 100 MHz). This means a PC100 SDRAM DIMM can ideally pass up to 800 MBps between the DIMM and motherboard (though speeds rarely get this high in actual practice). By 1999, SDRAM was available to support a 133-MHz FSB speed, and this was termed PC133 SDRAM. With the same 64-bit data bus on a DIMM, PC133 SDRAM DIMM can theoretically handle up to 1.1 GBps (8 bytes x 133 MHz).

Rambus introduced its memory technology in 1995. Rather than using the existing processor bus, as other memory technologies do, Direct RDRAM employs a small 16-bit data bus with a dedicated high-speed (300-MHz) clock. Since Rambus handles two operations per clock cycle, this effectively doubles the clock speed to 600 MHz. Rambus also supports dual channels, effectively doubling the data bus to 32 bits and providing a peak bandwidth of 2.4 GBps (300 MHz x 2 operations per clock x 16 bits x 2 channels). Rambus modules rated for 300-MHz operation are termed PC600 RIMMs (the 300-MHz clock x 2). By 1998, Rambus had advanced to dual 400-MHz channels, so the effective clock rate became 800 MHz (400 MHz x 2) with a 16-bit data bus, yielding a peak bandwidth of 1.6 GBps. This doubles to 3.2 GBps when you add a second channel. 184-pin Rambus modules rated for 800-MHz operation are called PC800 RIMMs. Today, Rambus is advancing to 1,066 MHz (PC1066) and 1,200 MHz (PC1200) for even higher performance.

DDR SDRAM. The issue with SDRAM is that each data line passes only one bit per clock cycle (resulting, for a 64-bit memory device, in 64 bits per clock). To compete more closely with RDRAM, SDRAM creators developed memory that would perform two operations per clock cycle. This memory is called double data rate or DDR SDRAM. For a 100-MHz FSB, DDR SDRAM provides twice the bandwidth (8 bytes x 100 MHz x 2) or 1.6 GBps. For a 133-MHz FSB, DDR SDRAM can reach a peak bandwidth of 2.1 GBps (8 bytes x 133 MHz x 2). With a 166-MHz FSB, DDR SDRAM can offer a peak bandwidth of 2.7 GBps (8 bytes x 166 MHz x 2). These are called DDR200, DDR266, and DDR333 for 100-MHz, 133-MHz, and 166-MHz speeds, respectively. But memory makers often name the modules based on their bandwidth, such as PC1600 (1.6 GBps), PC2100 (2.1 GBps), and PC2700 (2.7 GBps). A DDR SDRAM module uses 184 pins (like a RIMM). Since DDR SDRAM builds on well-established SDRAM technology, it's often cheaper than Direct Rambus modules.

The important thing to remember is that you cannot mix SDRAM, Rambus, and DDR SDRAM on the same motherboard. When you're adding memory, select the type specifically intended for your motherboard. SDRAM modules each have 168 pins. Rambus and DDR SDRAM modules have 184 pins. Although they are all similar in size, the difference in pin count and keying prevents you from using them in the wrong slots. You'll also need to check whether the memory in your system uses error-checking techniques such as parity and ECC (error correction code) and whether it's buffered or unbuffered.

Memory is one of the most popular PC upgrades. It's relatively inexpensive and easy to do, yet it can improve performance and allow the system to support more (and more sophisticated) applications. When planning a memory upgrade, you need to evaluate the amount of RAM you need and understand the memory types and characteristics that are appropriate for your system. For tips that will ease the installation process, see "Adding More Memory".

Stephen J. Bigelow is the author of Troubleshooting, Maintaining, and Repairing Personal Computers (Fifth Edition).



To: Estephen who wrote (80624)4/7/2002 10:53:32 PM
From: Don Green  Respond to of 93625
 
JAGfn Whispers 04/10/2002

RMBS Estimate: .05 Whisper: .06