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To: Joe NYC who wrote (71504)	2/12/2002 4:55:21 PM
From: Dan3	Respond to of 275872

Imagine these directly connected to Hammer's memory bus... Infineon says 256-Mbit reduced latency DRAM closes speed gap with SRAMs Semiconductor Business News (02/11/02 13:14 p.m. EST) MUNICH--Infineon Technologies AG today announced samples of 256-megabit reduced latency DRAMs, which are designed for high-speed networking and fast-cache applications. These memories are based on double-data rate (DDR) synchronous DRAM architectures with enhancement to provide random access in row cycle times down to 25 ns vs. 50 ns or more with standard DRAMs, said the company. Infineon and U.S.-based Micron Technology Inc. are working together to support compatible RLDRAM products. The first 256-Mbit RLDRAMs are being offered in two organizations: 8-Mbit-by-32 and 16-Mbit-by-16. Operating at clock frequencies up to 300 MHz and using a DDR interface, RLDRAM supports a sustained bandwidth of 2.4 Gbytes-per-second while allowing random access within each of its eight banks of memory, said the Munich-based chip maker. The RLDRAMs are intended to close the speed gap between DRAMs and fast SRAMs in high-end routers and switches for wide bandwidth data transmissions. "RLDRAM offers the most advanced memory solution for data-packet buffering, IP [Internet Protocol] address look-up table and fast cache applications," said Ernst Strasser, marketing director for graphics memory and specialty DRAM products at Infineon. He said the reduced latency DRAM is well suited for 10-Gbit/sec. OC-192 and 40-Gbit/sec. OC-768 systems. The memories are packaged in a thin-fine pitch ball-grid array (T-FBGA) package, which supports clock frequencies of 300- MHz while maintaining a small form factor, Infineon said. Compatible RLDRAMs from Infineon and Micron Technology will be available in three speed grades--300, 250, and 200 MHz. Infineon is sampling its current 200-MHz 256-MBit RLDRAM at a price of $54. siliconstrategies.com