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Technology Stocks : Kopin Corp. (KOPN) -- Ignore unavailable to you. Want to Upgrade?

To: Johnny Canuck who wrote (1596)	2/24/2002 7:42:37 PM
From: Gary Kao	Respond to of 1820

Harry: thanks in advance, and hoping your release goes well. Any notes you post will always be greatly valued. Gary

To: Johnny Canuck who wrote (1596)	4/12/2002 4:45:24 AM
From: Johnny Canuck	Respond to of 1820

Kopin Boosts Performance of HBT Structures Online staff -- Electronic News, 4/11/2002 Kopin Corp. today plans to detail its latest developments of InGaP/GaAsInN (GAIN) and InP heterojunction bipolar transistors (HBTs). The company said today that it has achieved new performance levels for GAIN and InP HBTs by using its advanced Wafer Engineering technology. Kopin’s technical paper, "Base Layer Band-Gap Engineering for III-V Bipolar Devices," will be presented today at the GaAs Mantech conference in San Diego. Advanced Wireless Semiconductor Co., the University of California at San Diego and Rockwell Scientific collaborated with Kopin on the project. "Kopin is using new, advanced approaches to engineer platforms for next-generation power amplifiers and fiber-optic circuits," said John C.C. Fan, Kopin’s president and CEO, in a statement. "Through a combination of new alloys and band-gap engineering, we are enhancing the performance of HBT structures and providing custom-designed features for new applications. In band-gap engineering, the material compositions are carefully and systematically programmed to controllably grade the energy band gap, which optimizes circuit speed and power efficiency." By using new alloys, the Taunton, Mass.-based company’s R&D team focused on developing HBT platforms with significantly better performance. "We have achieved a 2x increase in DC current gain and a 10 percent to 20 percent increase in current cut-off frequency by engineering the band characteristics of key layers within the GAIN and InP HBTs," said Roger E. Welser, director of transistor technology at Kopin. "We expect reduced power consumption, lower operating voltages and enhanced DC and RF performance to be key differentiators for our technology in the future, enabling our circuit partners to develop superior power amplifiers and fiber-optic circuits." Kopin grows both GAIN and InP HBTs on its Metalorganic Chemical Vapor Deposition (MOCVD) production platforms using high-volume growth algorithms. e-insite.net