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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: StanX Long who wrote (61497)	3/6/2002 3:38:22 AM
From: StanX Long	Read Replies (1) \| Respond to of 70976

TSMC, Philips, STMicro Produce Test Devices at 90nm Online staff -- Electronic News, 3/5/2002 e-insite.net Royal Philips Electronics, STMicroelectronics and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) today announced a collaboration on 90nm (0.09-micron) technology that has already yielded test devices for all three companies. The companies have formed an agreement on a new 90nm CMOS process and to jointly develop next generation 65nm (0.065-micron) and below processes. The partners said 90nm test devices have been successfully fabricated by STMicro and Philip in Crolles, France, and by TSMC in Hsin-Chu, Taiwan. Prototyping of products at this node is expected to take place in the second half of this year. TSMC said it is the first foundry company to deliver a functional test device at the 90nm node and that it puts the company more than a year ahead of the ITRS roadmap. The technology was validated on fully functional test chips in the fourth quarter of 2001, on the ST/Philips pilot line in Crolles, France, and at TSMC Fab3’s R&D facilities. Test chips included 1Mbit and 4Mbit embedded SRAM. The companies said they expect to increase SRAM density beyond 735kbit/mm2 by the end of the year, when the SRAM cell size is reduced from its initial 1.36-micron2 to 1.27-micron2.