Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : Intel Corporation (INTC) -- Ignore unavailable to you. Want to Upgrade?

To: dale_laroy who wrote (161777)	3/11/2002 11:31:15 AM
From: Dan3	Respond to of 186894

I don't know how big the Gresham cleanroom is supposed to be. Here are the sizes of FASL's first 3 cleanrooms: The first FASL facility (JV1) commenced volume production of 4- and 16-megabit flash memory chips on 0.5-micron technology in the fourth quarter of 1994. Since then, the facility has migrated to 0.23-micron technology. The JV1 facility includes 70,000 square feet of Class 1 clean room space housed in a 276,000 square-foot building. Groundbreaking for the second joint-venture facility (JV2) occurred in March of 1996, and first shipments began in the fourth quarter of 1997. The JV2 facility includes approximately 114,000 square feet of class 1 clean room space, and uses an advanced 0.23 micron process technology. In July of 2000, FASL broke ground for its third "megafab" for the manufacture of flash memory devices. Construction of the $1.5 billion facility began immediately, with initial production planned for the second half of 2001. The facility, designated as JV3, will encompass more than 100,000 square feet of clean room space and be capable of producing 7,500 eight-inch wafers per week when fully equipped and operating at peak capacity. The new facility will include a shell for future expansion that can accommodate 12 inch (300mm) wafer production. amd.com