SST Unveils Industry's First 16 Mbit Flash/8 Mbit SRAM ComboMemory Device
New ComboMemory Device Offers Customers Optimum Memory Configuration and Industry's Lowest Energy Consumption for Portable Devices
SUNNYVALE, Calif.--(BUSINESS WIRE)--April 8, 2002-- SST (Silicon Storage Technology, Inc., NASDAQ: SSTI), a leader in flash memory technology, today announced the industry's first high-performance, low-power combination memory device that integrates 16 Mbits of dual-bank flash memory with 8 Mbits of SRAM in a single, space-saving ball grid array (BGA) package. Previously, designers requiring 8 Mbits of SRAM in a combination memory device were limited to solutions paired with 32 Mbits of flash memory. With the new SST34HF1681 ComboMemory device, designers of low-cost portable applications get the ideal amount of SRAM they need without incurring the costs of additional flash memory. Also, due to the superior features of SST's SuperFlash technology, the new product has the industry's lowest energy consumption of any combination memory device. The low energy consumption coupled with an optimum memory configuration makes the SST34HF1681 ideal for feature-rich, cost-sensitive portable devices, such as cellular phones, wireless data modules, PDA add-in cards/modules, handheld PCs, GPS receivers and wireless LAN cards.
``Our experience has demonstrated that delivering high-quality products quickly to market and remaining cost-efficient are the top concerns for our customers in the portable market,'' said Paul Lui, vice president, Special Product Group, SST. ``We understand that it is critical for every component to meet, but not exceed, the customer's memory density design requirements. We developed the new ComboMemory solution to help customers stay competitive by utilizing an ideal balance of flash and SRAM memory technology that directly meets their needs and is sensitive to budget concerns.''
SST's new ComboMemory device achieves the industry's lowest energy consumption due to the inherent fast program/erase speed coupled with the small sector size of SST's SuperFlash technology. The SST34HF1681 offers fast programming and erase speeds of 14 microseconds (us) per Word for programming; 18 milliseconds (ms) for sector/block erase and 70 ms for chip erase. Competing combination memories require much longer program and erase times, thus driving higher levels of current consumption and resulting in shorter battery life for portable applications.
The new SST34HF1681 ComboMemory device provides an easy migration path from SST's existing ComboMemory products, such as the SST34HF1621 (16 Mbit flash with 2 Mbit SRAM) and the SST34HF1641 (16 Mbit flash with 4 Mbit SRAM). The ability to easily upgrade devices allows SST's ComboMemory customers to differentiate their product's features without changing the board layout.
The SST34HF1681, as with all of SST's ComboMemory products, incorporates the SoftPartition architecture, which allows system designers to seamlessly partition the data and program code into small, granular 1 KWord sectors. This small, uniform sector size gives designers more flexibility by allowing them to balance the amount of memory used for code and data storage depending on the application. Additionally, the new ComboMemory device incorporates a dual-bank flash memory architecture, allowing for concurrent operation between the two internal flash memory banks and the SRAM.
Pricing and Availability
Production quantities of the SST34HF1681 ComboMemory device are available now. The device is priced at $11.95 each in a BGA package and 10K unit quantities.
About SuperFlash Technology
SST's SuperFlash technology is a NOR type, split-gate cell architecture which uses a reliable thick-oxide process with fewer manufacturing steps resulting in a low-cost, nonvolatile memory solution with excellent data retention and higher reliability. The split-gate NOR SuperFlash architecture facilitates a simple and flexible design suitable for high performance, high reliability, small or medium sector size, in- or off-system programming and a variety of densities, all in a single CMOS-compatible technology.
About Silicon Storage Technology, Inc.
Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of nonvolatile memory solutions, based on proprietary, patented SuperFlash technology, for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. SST's product families include high functionality flash memory components, flash mass storage products and 8-bit microcontrollers with on-chip flash memory. SST also offers its SuperFlash technology for embedded applications through its world-class manufacturing partners and technology licensees IBM, Motorola, National Semiconductor, NEC Corporation, Oki Electric Industry Co. Ltd., Samsung Electronics Co. Ltd., SANYO Electric Co., Ltd., Seiko Epson Corp., Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) and Winbond Electronics Corp. TSMC offers SuperFlash under its trademark Emb-FLASH. Further information on SST can be found on the company's Web site at sst.com.
For more information about SST and the company's comprehensive list of product offerings, please call 1-888/SST-CHIP. Information can also be requested via email to sfoster@sst.com or through SST's Web site at sst.com. SST is located at 1171 Sonora Court, Sunnyvale, Calif.; telephone: 408/735-9110; fax: 408/735-9036.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. ComboMemory and SoftPartition are trademarks of Silicon Storage Technology, Inc. Emb-FLASH is a trademark of TSMC. All other trademarks or registered trademarks are the property of their respective holders.
Key Features of the SST34HF1681 ComboMemory Device
16 Mbit Dual-Bank Flash Memory With 8 Mbit SRAM in a Single, Space-Saving Device
Flash organization: 1M x 16
SRAM organization: 512 Kbit x 16
Packages Available
56-ball LFBGA (8 mm x 10 mm)
Low Power Consumption:
Active Current: 25 milliamperes
Standby Current: 20 microamperes Fast Erase and Word-Program
Sector-Erase Time: 18 milliseconds (ms)
Block-Erase Time: 18 ms
Chip-Erase Time: 70 ms
Word-Program Time: 14 microseconds
Superior Reliability:
Endurance: 100,000 Cycles
Greater than 100 years data retention
Fast Read Access Time
Flash: 70 and 90 nanoseconds (ns)
SRAM: 70 and 90 ns
Block-Erase Capability
Uniform 32 KWord blocks
Sector-Erase Capability
Uniform 1 KWord sectors
Dual-Bank Architecture for Concurrent Read/Write Operation
16 Mbit: 12 Mbit + 4 Mbit
Single 2.7V - 3.3V Read and Write Operations
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Contact:
Silicon Storage Technology, Inc.
Scott Foster, 408/523-7739
sfoster@sst.com
or
Porter Novelli
Jennifer Loperena, 408/369-1500 ex 25
jennifer.loperena@porternovelli.com |
