Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: StanX Long who wrote (62307)	3/25/2002 1:00:20 AM
From: StanX Long	Read Replies (1) \| Respond to of 70976

TSMC teams with government on MRAM development By Mike Clendenin EE Times March 24, 2002 (1:39 p.m. EST) eetimes.com TAIPEI, Taiwan — Taiwan Semiconductor Manufacturing Co. is joining the race to develop magnetoresistive RAM, competing with the likes of IBM, Infineon and Motorola to enable a next-generation memory replacement for SRAM, DRAM and flash. TSMC is the first foundry to signal its intention to integrate the experimental technology into a bulk CMOS process. It will likely focus on low-density magnetoresistive random access memory (MRAM) for embedded applications instead of higher-density discrete chips. The company will join with a government research body, the Electronics Research and Service Organization (ERSO), to develop core MRAM technology, including basic cell structure and deposition and etch processes for magnetic thin films. TSMC would not provide details about the project, such as a timeline for pilot or volume implementation within the foundry. A prepared statement, short on specifics, quoted TSMC chief technology officer Chenming Hu as saying that the joint effort "is expected to push Taiwan to the ranks of global pioneers in MRAM R&D."