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To: Johnny Canuck who wrote (36642)	4/3/2002 4:13:13 AM
From: Johnny Canuck	Respond to of 69344

Emcore, RSC Begin GaN HEMT Supply Agreement Online staff -- Electronic News, 4/2/2002 Emcore Corp. today announced a supply agreement for gallium nitride high electron mobility transistor (GaN HEMT) epitaxial wafers to Rockwell Scientific Co. (RSC). Somerset, N.J.-based Emcore said it would supply Thousand Oaks, Calif.-based RSC with GaN HEMT wafers and then use RSC’s feedback monitoring device behavior and material-device correlation to improve its volume wafer production process. RSC will use Emcore’s epiwafers to design HEMT power amplifiers (PAs) intended for the wireless RF design, military, and automotive industries. GaN-based devices can operate at extremely high temperatures and can accommodate very high power levels without affecting performance, the companies said. The linearity of GaN HEMTs makes them attractive for use in PAs for cellular base station applications. "The rapidly expanding GaN marketplace offers tremendous opportunities for Emcore and this partnership with Rockwell Scientific will augment Emcore’s capability to provide effective GaN-based products," said Tom Miehe, VP of sales and marketing at Emcore, in a statement. "Having our materials thoroughly road-tested by strategic partners, such as RSC, ensures that our high volume production facilities are fully optimized." Emcore said it predicts that the 14V automotive batteries currently in use will be replaced in the next two to three years by 42V batteries to accommodate the growing number of electronic instruments installed in automobiles. The company believes the high breakdown fields associated with GaN devices make them attractive to automotive manufacturers. "GaN HEMTs are at a stage of maturity where material uniformity and reproducibility are key to achieving robust microwave devices and circuits," said Karim Boutros, senior scientist and head of the GaN effort at RSC, in a statement. "We are very pleased to partner with Emcore on GaN HEMT development. Our combined strengths and complementary roles will provide rapid advances in fundamental material and device technologies, and will accelerate the introduction of GaN-based power amplifiers into military and commercial systems."