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To: Yousef who wrote (76594)4/6/2002 6:21:22 PM
From: Bill JacksonRead Replies (1) | Respond to of 275872
 
Yousef. Not at all. Nothing to do with phonons. Just accelerated rate of diffusion.
In a material the dopants are not strongly bound and can hop from place to place with thermal agitation. Increase the heat and they diffuse to make their concentration equal throughout the material. That of course ruins the material as transistor material.
This is usually what limits the upper long term operating temperature.
It is a log function, that means accelerated methods are valid so you can plot time to destruction at 400C, 350C,300C on log chart until you reach the amount of time you want to waste testing it.(why do a room temp test for 100,000 years? takes a while).

Now if you think of gates as small features of different doping from their neighbours, then you can see that failure is a finction of size. Smaller features will diffuse away faster than larger features at the same temperature.
Bill