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To: tcmay who wrote (76673)	4/8/2002 4:34:24 PM
From: Bill Jackson	Read Replies (1) \| Respond to of 275872

Tim, From the context it appears that the uinquirer felt that Intel denied the use of SOI. Spoke to my friend about diffusion. He says you are right in a passive device that is off and just heated, however there is a phenomenon he speaks of as electron battering, or electron induced migration. Apparently at smaller feature sizes, higher teemperatues and high current densities of electron flow they actually move assorted atoms around, esp those that do not quite fit the matrix. In vias this flow can actually sculpt small conductors and lead to failure through the erosion caused. Does that sound plausible? Bill