SST Expands ComboMemory Product Family with Low-Density Flash Memory/SRAM Devices
SST's First Series of Low-Density Combination Memory Devices Combine Low Power Consumption, Small Form Factor and Easy Upgradability for Portable Electronic Devices
SUNNYVALE, Calif.--(BUSINESS WIRE)--April 29, 2002-- SST (Silicon Storage Technology, Inc., NASDAQ: SSTI), a leader in flash memory technology, today announced its first low-density flash memory/SRAM combination memory products. SST's new ComboMemory products include the SST32HF202 (2 Mbit flash plus 2 Mbit SRAM) and the SST32HF402 (4 Mbit flash plus 2 Mbit SRAM). Both products are housed in a tiny 6 mm x 8 mm x 1.4 mm LFBGA (lead-free (non-Pb) ball grid array) multi-chip package, one of the smallest packages available in the market. The extremely small footprint of the devices makes them an ideal solution for handheld applications that require small form factor packages, such as pagers, electronic organizers, games, MP3 players, global positioning systems (GPS), as well as PDA add-in cards and modules.
With the addition of the SST32HF202/402, SST is uniquely positioned to offer engineers the ability to migrate designs from standard flash to flash/SRAM combination memories while maintaining the same footprint. This unique ability is due to SST's proprietary SuperFlash technology, which provides the smallest flash memory die sizes on the market today. SST's SuperFlash technology also boasts the industry's lowest energy consumption, making it ideal for battery-sensitive portable applications.
"With our new low-density ComboMemory products, SST continues to lead the industry by anticipating the market's needs in low-density flash memory applications," said Paul Lui, vice president, Special Product Group, SST. "Currently, most manufacturers just concentrate on combining high-density NOR flash with fairly high-density SRAM, thereby ignoring a large portion of the industry that requires low-density, low-power flash plus SRAM. Designers can now integrate our ultra low-power, cost effective, small form factor flash memory/SRAM devices into their battery- and price-sensitive portable designs."
SST's new products, as with all of its ComboMemory products, incorporate the SoftPartition architecture, which allows system designers to seamlessly partition the data and program code into small, granular 2 KWord sectors. This small, uniform sector size gives designers more flexibility by allowing them to balance the amount of memory used for code and data storage depending on the application. In addition, to maximize system throughput, SST's new ComboMemory products enable concurrent operation between the flash and the SRAM. With concurrent memory operations, SST's ComboMemory products are able to simultaneously read from or write to the SRAM bank while erasing or programming in the flash memory bank. Furthermore, the SRAM memory bank can be read or written while the flash memory bank performs sector erase, bank erase or byte program concurrently.
As part of its effort to support environmentally safe products, the new ComboMemory devices are available in a lead-free (non-Pb) ball-grid array package, providing an environmentally safe alternative to standard lead-based packaging options. Currently, there is no industry standard definition of lead-free packaging, however, SST defines lead-free content as virtually zero percent lead inside or outside of the package or in the solder material on the terminals. SST is committed to offering environmentally friendly alternatives that yield the same performance, reliability and quality as traditional solutions, while maintaining the high standards its customers expect, thus furthering the global drive for lead-free solutions in electronic components and systems.
Pricing and Availability
Production quantities of the SST32HF202 and SST32HF402 ComboMemory devices are available now. The SST32HF202 is priced at $3.95 each, in 10K unit quantities, and the SST32HF402 is priced at $4.95 each, in 10K unit quantities. The lead-free (non-Pb) packaging option is available at no additional cost.
About SuperFlash Technology
SST's SuperFlash technology is a NOR type, split-gate cell architecture which uses a reliable thick-oxide process with fewer manufacturing steps resulting in a low-cost, nonvolatile memory solution with excellent data retention and higher reliability. The split-gate NOR SuperFlash architecture facilitates a simple and flexible design suitable for high performance, high reliability, small or medium sector size, in- or off-system programming and a variety of densities, all in a single CMOS-compatible technology.
About Silicon Storage Technology, Inc.
Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of nonvolatile memory solutions, based on proprietary, patented SuperFlash technology, for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. SST's product families include high functionality flash memory components, flash mass storage products and 8-bit microcontrollers with on-chip flash memory. SST also offers its SuperFlash technology for embedded applications through its world-class manufacturing partners and technology licensees IBM, Motorola, National Semiconductor, NEC Corporation, Oki Electric Industry Co. Ltd., Samsung Electronics Co. Ltd., SANYO Electric Co., Ltd., Seiko Epson Corp., Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) and Winbond Electronics Corp. TSMC offers SuperFlash under its trademark Emb-FLASH. Further information on SST can be found on the company's Web site at sst.com.
For more information about SST and the company's comprehensive list of product offerings, please call 1-888/SST-CHIP. Information can also be requested via email to sfoster@sst.com or through SST's Web site at sst.com. SST is located at 1171 Sonora Court, Sunnyvale, Calif.; telephone: 408/735-9110; fax: 408/735-9036.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. ComboMemory and SoftPartition are trademarks of Silicon Storage Technology, Inc. Emb-FLASH is a trademark of TSMC.
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Key Features of the SST32HF202/402 ComboMemory Devices
-- Flash Memory Plus SRAM in a Single, Space-Saving Device
-- SST32HF202: 128 Kbit x 16 flash + 128 Kbit x 16 SRAM
-- SST32HF402: 256 Kbit x 16 flash + 128 Kbit x 16 SRAM
-- Extremely Small Package
-- 48-ball LFBGA (6 mm x 8 mm x 1.4 mm)
-- Low Power Consumption:
-- Active Current: 15 milliamperes for flash or SRAM read
-- Standby Current: 20 microamperes
-- Conforms to Flash Pinout for Easy Migration From Flash-Only
Devices
-- Superior Reliability:
-- Endurance: 100,000 cycles
-- Greater than 100 years data retention
-- Fast Erase and Word-Program
-- Sector-Erase Time: 18 milliseconds (ms)
-- Block-Erase Time: 18 ms
-- Chip-Erase Time: 70 ms
-- Word-Program Time: 14 microseconds
-- Chip Rewrite Time:
SST32HF202: 2 seconds
SST32HF402: 4 seconds
-- Fast Read Access Time
-- Flash: 70 and 90 nanoseconds (ns)
-- SRAM: 70 and 90 ns
-- Flexible Erase Capability
-- Uniform 2 KWord sectors
-- Uniform 32 KWord blocks
-- Single 2.7V - 3.3V Read and Write Operations
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Contact:
Silicon Storage Technology, Inc.
Scott Foster, 408/523-7739
sfoster@sst.com
or
Porter Novelli
Jennifer Loperena, 408/369-1500 ex.25
jennifer.loperena@porternovelli.com |
