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Technology Stocks : KLA-Tencor Corporation (KLAC) -- Ignore unavailable to you. Want to Upgrade?

To: SemiBull who wrote (1650)	6/4/2002 6:38:09 PM
From: SemiBull	Read Replies (1) \| Respond to of 1779

KLA-Tencor Introduces Quantox(TM) XP: Enabling Technology for Advanced Gate Formation for Sub-130-nm Devices In-Line, Real-Time Prediction of Transistor Performance Accelerates Time to Market for Advanced ICs SAN JOSE, Calif., June 4 /PRNewswire-FirstCall/ -- KLA-Tencor Corp. (Nasdaq: KLAC - News) today introduced Quantox(TM) XP, its next-generation non-contact, in-line electrical monitoring and characterization system for controlling advanced gate dielectric processes at the 130-nm and below nodes. Quantox XP data provides better than 95 percent correlation to device electrical test data, enabling chipmakers to predict transistor performance in-line, rather than having to wait until end-of-line electrical test. This is accomplished through the tool's ACTIV(TM) technology, which provides highly accurate and comprehensive information on both the physical and electrical properties of advanced gate dielectric materials in real time. These materials include silicon oxynitride (SiON) and high-k dielectrics. By achieving tighter control of these advanced dielectrics, chip manufacturers can accelerate their adoption for use in the volume production of high-speed/low-power-consumption integrated circuits (ICs) that are fueling advanced mobile and wireless consumer products. "Having the tools to predict end-of-line device yield and performance at the time of gate formation would be of immense value in enabling us to accelerate our production schedules and meet our customers' time-to-market goals," said Vic Ting, diffusion manager at UMC. "Quantox XP's ability to monitor extremely thin gate dielectrics in-line at the 130-nm node will help us to ensure tight control over our advanced processes and more quickly ramp-up to volume production on our latest-generation products." The performance of the transistor -- the fundamental building block of a microchip -- is largely determined by the capacitance and leakage properties of the gate dielectric materials used to produce it. Whereas capacitance determines the switching speed of the transistor, leakage determines how much power is lost when the device is not in use. At larger design rules, where leakage is not a significant factor, chip manufacturers could simply measure the thickness of the dielectric to determine its capacitance and obtain an accurate indication of transistor performance. Below the 130-nm node, however, dielectrics become so thin (less than 20 angstroms, or the equivalent of 0.002 microns) that they are prone to high leakage currents, resulting in a significant impact on transistor performance. Optical metrology techniques cannot measure electrical leakage, and are thus no longer sufficient for determining overall gate dielectric and device performance at these smaller design rules -- posing a significant challenge to the development of future-generation mobile and wireless consumer electronic products. Traditional electrical measurement techniques address this issue, but take days or weeks to collect gate dielectric data using specially fabricated polysilicon or metal test sites and an electrical probe. Unlike these methods, Quantox XP provides highly accurate electrical measurements of the critical properties that determine gate dielectric performance in the production line using a patented, non-contact technique. Independent measurements of gate dielectric capacitance and leakage can then be provided within minutes of gate dielectric formation. "Quantox XP was specifically developed to help our customers meet the challenges of bringing high-k dielectrics into production, which will be essential below the 130-nm node," stated Sergio Edelstein, general manager of KLA-Tencor's Film and Surface Technology Division. "Since the electrical measurements provided by Quantox XP correlate to transistor performance, our customers don't have to wait until end-of-line electrical test to determine if they have a high-performing device or not. This is one of the biggest benefits that Quantox XP brings to our customers because it translates directly to their bottom line." Leveraging KLA-Tencor's ACTIV technology, Quantox XP incorporates new capabilities and features that enable measurement of extremely challenging gate materials, such as sub-20-angstrom nitrided oxide and high-k dielectric films, with a high degree of precision to within 0.10 angstroms. The system supports all Semiconductor Equipment and Materials International (SEMI) automation standards for 300-mm production. Quantox XP has been shipped to several leading-edge logic IC manufacturers, and is currently being used for in-line gate dielectric monitoring of sub-130-nm processes. About KLA-Tencor: KLA-Tencor is the world leader in yield management and process control solutions for semiconductor manufacturing and related industries. Headquartered in San Jose, Calif., with over $2 billion in revenues and operations around the world, KLA-Tencor ranked #6 on S&P's 2002 index of the top 500 companies in the U.S. KLA-Tencor is traded on the Nasdaq National Market under the symbol KLAC. Additional information about the company is available on the Internet at kla-tencor.com NOTE: Quantox and ACTIV are trademarks of KLA-Tencor. SOURCE: KLA-Tencor Corp.