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Technology Stocks : FSII - The Worst is Over? -- Ignore unavailable to you. Want to Upgrade?

To: SemiBull who wrote (2730)	7/16/2002 8:11:52 PM
From: SemiBull	Read Replies (1) \| Respond to of 2754

FSI Introduces Breakthrough Process for Selective Etching of Next-Generation High-K Gate Oxides MINNEAPOLIS--(BUSINESS WIRE)--July 16, 2002--FSI International Inc. (Nasdaq:FSII - News) today announced the development of an enabling process for the implementation of high-k silicate gates for the 65-nm technology node. Designed for utilization in FSI's immersion and spray tools, the new process chemistry has demonstrated effectiveness in the selective etching of high-k silicates with its unprecedented etch rate and selectivity. FSI's breakthrough came in cooperation with International SEMATECH (ISMT), the global consortium of semiconductor manufacturers, which had engaged a number of equipment and chemical suppliers to work on potential wet etch solutions for high-k films. International SEMATECH provided both wafers and technical guidance to FSI. According to Larry Larson, associate director for Front End Processes at ISMT, "Finding a workable etching process for high-k silicates is one of the key challenges the industry faces in realizing its technology roadmap and our role has been to facilitate and accelerate this effort." To keep pace with the International Technology Roadmap for Semiconductors (ITRS), the semiconductor industry must adopt the 65-nm technology node by 2004 and have it in production by 2007. During the migration to this node, high-k gate materials, such as metal silicates, will replace SiO2, which has been the dominant gate material since the inception of the integrated circuit. However, traditional chemistries, such as buffered oxide etch, that can be used to etch SiO2 gate material are not capable of etching high-k materials at a manufacturable rate and with high selectivity. FSI's new process chemistry provides high selectivity etching for high-k silicates that enables successful manufacturing. "FSI is first to market with an enabling etching process for high-k silicates at the 65-nm technology node -- this introduction will indeed benefit the industry. The process can be easily used with both our new 300-mm MAGELLAN(TM) 300 STG® Immersion Clean System, and our spray tool, the ZETA® Surface Conditioning System," said John Ely, president of FSI's Surface Conditioning Division. Silicate materials are leading contenders for the high-k material of choice at the 65-nm technology node. FSI's process chemistry has been demonstrated with good results on several silicates, including hafnium silicate and zirconium silicate. The new process chemistry provides etch rates up to >80 angstroms per minute and selectivity to tetraethyl orthosilicate (TEOS) deposited oxide as high as 16:1 on hafnium silicates. Specifically, hafnium silicate builds on existing chemical vapor deposition tools and techniques for film deposition, increasing its ease of use. Hafnium silicate also has extremely competitive performance levels with a "k" value of 12-14, with the ability to achieve effective gate oxide thickness approaching 1.0-nm. FSI's new high-k silicate etch process effectively demonstrates that the MAGELLAN and ZETA Systems are designed to address the challenges of 300-mm manufacturing at 100-nm and below technology nodes. Introduced in June, the innovative MAGELLAN System offers short cycle time, versatility and high process performance in a footprint up to 40 percent smaller than the competition. Conventional concentrated chemistries, as well as advanced dilute, ozone and gas-to-chemical chemistries that reduce cycle time and EHS impact, can be used in the system. The ZETA System, offering industry-leading batch spray processing in a small footprint, has been adopted by several 300-mm customers. The high-k silicate selective etch process further advances its applicability for leading technologies. FSI International Inc., a global supplier of wafer cleaning and resist processing equipment and technology, delivers economic and technical advantages for current and emerging microelectronics manufacturing challenges. Using the company's broad portfolio of products, which include immersion, spray, vapor and CryoKinetic systems for wafer cleaning, and resist processing systems for wafer coating and developing, customers are able to efficiently achieve their goals. FSI's customers include microelectronics manufacturers located throughout North America, Europe, Japan and the Asia-Pacific region. FSI maintains a Web site at <http://www.fsi-intl.com>. -------------------------------------------------------------------------------- Contact: FSI International Inc., Minneapolis Trade Media: Laurie Walker, 952/448-8066 or Financial Media and Investors: Benno Sand, 952/448-8936