To: Morris Catt who wrote (1632 ) 12/5/2002 9:09:42 AM From: JakeStraw Read Replies (1) | Respond to of 1712 International Rectifier Introduces 30V Stripe-Trench Technology Power MOSFETs with Industry's Lowest On-Resistance in the Standard D-Pak Outline Thursday December 5, 6:00 am ET biz.yahoo.com EL SEGUNDO, Calif.--(BUSINESS WIRE)--Dec. 5, 2002--International Rectifier, IR® (NYSE:IRF), introduces IRLR7833 and IRLR7821 HEXFET® power MOSFETs designed using the latest stripe-trench technology. Compared to competing MOSFETs, IR's new technology enables the IRLR7833 and IRLR7821 to gain up to 2.5% increase in efficiency or up to 25% part count reduction for DC-DC converters, depending on application needs. The new devices include the lowest on-resistance, or RDS(on), 30V MOSFET in a D-Pak outline on the market today. The two new MOSFETs are designed for synchronous buck converter circuits in servers, desktops, notebooks, and point-of-load (POL) converters in networking and communications equipment. The IRLR7833 can also be used for secondary side synchronous rectification for isolated converters. The IRLR7833 offers a 50% reduction in RDS(on), and the IRLR7821 exhibits more than 30% reduction in gate charge when compared to previous generation devices. With very low RDS(on), the IRLR7833 is ideal for synchronous MOSFET applications. The IRLR7821 has very low gate charge, making it an ideal control MOSFET. The new devices have a 20V gate rating for improved ruggedness. In desktop and VRM designs, and even notebook applications with up to 20A per phase requirement, the D-Pak package is widely used in the synchronous FET socket. Carl Blake, International Rectifier's Technical Marketing Manager for DC-DC products, said, "The new chip set using IR's new silicon technology allows designers to either improve efficiency or reduce part count. In one VRM design, four low-side MOSFETs are replaced with three IRLR7833 MOSFETs, providing better performance and better value."