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To: Ronald J. Clark who wrote (288)	1/15/2003 10:18:38 PM
From: Robert C. Nusbaum	Read Replies (1) \| Respond to of 301

January 07, 2003 08:08 Ibis Technology and IBM Agree to Develop Next-Generation MLD Process for the Manufacture of SIMOX-SOI Wafers DANVERS, Mass.--(BUSINESS WIRE)--Jan. 7, 2003--Ibis Technology Corporation (Nasdaq: IBIS), the leading provider of SIMOX-SOI implantation equipment and SIMOX-SOI wafers to the worldwide semiconductor industry, today announced the signing of a Joint Development Agreement with IBM. The objective of the agreement is to develop an enhanced, modified low-dose (MLD) process for the manufacture of SIMOX-SOI wafers, which are used as the starting material in the manufacture of advanced integrated circuits (ICs). Aimed at producing lower-cost, higher quality SIMOX-SOI wafers with thinner top silicon layers, the joint development work will be conducted at both Ibis and IBM. Both companies bring extensive expertise and experience regarding SIMOX-SOI technology to the joint effort. While at Ibis for the JDA kick-off meeting, Dr. Ghavam G. Shahidi, IBM Fellow, Director High Performance Logic Development, IBM Microelectronics Division, said, "Silicon-on-insulator (SOI) CMOS offers substantial benefits over bulk CMOS. This has been demonstrated in commercial production of high-performance microprocessors since 1998. Today the largest and fastest server microprocessor is built using SOI CMOS technology. Now SOI is being used by an increasing number of companies and its application is spreading to lower-end microprocessors and other IC products. As we move to the 0.1 micron generation and beyond, SOI is expected to be the technology of choice for a wide variety of devices, including advanced designs using multiple-gate transistors, strained silicon and even 3D ICs." "We can also see that progress is being made in terms of the technology and equipment used to manufacture SOI wafers. This should increase throughput and productivity and reduce costs," added Shahidi. "The work to be done under this joint agreement will significantly advance the science of SIMOX-SOI at a time when more and more chipmakers are turning to SOI as an essential ingredient in their technology roadmaps," said Martin Reid, president and CEO of Ibis Technology. "Keeping up with Moore's Law now requires more than traditional scaling of device dimensions. New materials and processes are needed, and SOI has demonstrated its ability to deliver faster, more energy efficient chips." "Importantly, SIMOX SOI wafer substrates incorporating improvements from this enhanced MLD joint development are intended to be qualified for IC products by a leading IC chip manufacturer and will be available to all Ibis wafer customers," said Reid. The original SIMOX (Separation-by-Implantation-of-Oxygen) process for the manufacture of SOI (Silicon-on-Insulator) wafers was developed over twenty years ago, and Ibis Technology became the first volume producer of SIMOX-SOI wafers and has produced the vast majority of all SIMOX-SOI wafers ever manufactured. Ibis has also designed and developed two new generations of oxygen ion implanters--the primary tools used in the manufacture of SIMOX-SOI wafers--most recently introducing the Ibis i2000 implanter in March of last year. IBM, a pioneer in the development and adoption of SOI technology, developed the original MLD process for high quality, low cost SIMOX-SOI wafers. IBM then licensed Ibis to manufacture SIMOX-SOI wafers using the production-proven MLD process for sale to IBM and all other Ibis customers. Ibis has been marketing these products under the name Advantox MLD. About SIMOX-SOI Silicon-on-Insulator (SOI) is a manufacturing technology where an insulating layer is created in a silicon wafer, isolating the top layer of silicon where the active transistors will be manufactured from the rest of the bulk silicon wafer. The buried oxide layer acts as a barrier that reduces electrical leakage from the transistors, resulting in semiconductor devices that are faster and more power efficient. These benefits make SOI a valuable technology for chipmakers producing IC's for high performance applications such as servers and workstations, portable and desktop computers, wireless communication devices, integrated optical components and automotive electronics. Separation-by-IMplantation-of-OXygen (SIMOX) refers to a technique used by Ibis for manufacturing SOI wafers where an oxygen implanter creates a very thin insulating layer within the wafer, just below a thin layer of silicon on the top of the wafer. Compared to competing technologies, the SIMOX process offers high quality SOI wafers at competitive costs in production quantities. About Ibis Technology Ibis Technology Corporation is the leading provider of SIMOX-SOI (Separation-by-IMplantation-of-OXygen Silicon-On-Insulator) equipment and wafers for the worldwide semiconductor industry. The company is headquartered in Danvers, Massachusetts and maintains an office in Aptos, California. Ibis Technology is traded on the Nasdaq National Market under the symbol IBIS. Information about Ibis Technology Corporation and SIMOX-SOI is available on Ibis' World Wide Web site at www.ibis.com. Note: Ibis is a trademark and Advantox is a registered trademark of Ibis Technology Corporation. All other trademarks are the property of their respective owners. CONTACT: Ibis Technology Corporation Debra L. Nelson, 978/777-4247 or IR/PR Counsel For Ibis Technology Bill Monigle, 603/424-1184